IXFH69N30P IXFT69N30P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = = ≤ ≤ RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 300 V VGSS Continuous ± 20 V VGSM Transient ± 30 V ID25 TC = 25°C IDM TC = 25°C, Pulse Width Limited by TJM Maximum Ratings IA 69 A 200 A TC = 25°C 69 A EAS TC = 25°C 1.5 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ≤ 150°C 20 V/ns PD TC = 25°C 500 W -55 to +150 °C TJM +150 °C Tstg -55 to +150 °C TJ S D (Tab) G = Gate S = Source z °C TSOLD Plastic Body for 10s 260 °C z Md Mounting Torque (TO-247) 1.13/10 Nm/lb.in. z Weight TO-247 TO-268 6 4 g g z z z z VGS = 0V, ID = 250µA 300 VGS(th) VDS = VGS, ID = 4mA 2.5 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V V ±100 nA 25 µA TJ = 125°C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2009 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Applications V 5.0 International Standard Packages Fast Intrinsic Diode Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages z BVDSS D = Drain Tab = Drain Features 300 Characteristic Values Min. Typ. Max. D (Tab) S G 1.6mm (0.063in) from Case for 10s Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) D TO-268 (IXFT) TL RDS(on) 300V 69A Ω 49mΩ 200ns 250 µA 49 mΩ z DC-DC Coverters Battery Chargers z Switch-Mode and Resonant-Mode Power Supplies z DC Choppers z AC and DC Motor Drives z Uninterrupted Power Supplies z High Speed Power Switching Applications z DS99220F(10/09) IXFH69N30P IXFT69N30P Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 0.5 • ID25, Note 1 30 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 69A RG = 4Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 34.5A Qgd 48 S 4960 pF 760 pF 190 pF 25 ns 25 ns 75 ns 27 ns 156 nC 32 nC 79 nC 0.25 °C/W RthJC RthCS TO-247 (IXFH) Outline TO-247 0.21 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM Characteristic Values Min. Typ. Max. 69 A Repetitive, Pulse Width Limited by TJM 270 A IF = IS, VGS = 0V, Note 1 1.5 V 200 ns 100 IF = 25A, -di/dt = 100A/µs, VR = 100V, VGS = 0V 500 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 (IXFT) Outline nC Note 1. Pulse test, t ≤ 300µs, duty cycle, d ≤ 2%. Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFH69N30P IXFT69N30P Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 70 180 VGS = 10V 8V 60 VGS = 10V 9V 160 140 8V 120 7V ID - Amperes ID - Amperes 50 40 30 6V 100 7V 80 60 20 6V 40 10 5V 20 0 5V 0 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 0 2 4 6 8 10 12 14 16 18 20 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 34.5A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 70 3.4 VGS = 10V 8V 60 VGS = 10V 3.0 R DS(on) - Normalized 7V ID - Amperes 50 6V 40 30 20 2.6 2.2 I D = 69A 1.8 I D = 34.5A 1.4 1.0 5V 10 0.6 0 0.2 0 1 2 3 4 5 6 7 8 9 -50 -25 0 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade VDS - Volts Fig. 6. Maximum Drain Current vs. Case Temperature Fig. 5. RDS(on) Normalized to ID = 34.5A Value vs. Drain Current 80 4.0 VGS = 10V 3.5 70 TJ = 125ºC ID - Amperes R DS(on) - Normalized 60 3.0 2.5 2.0 1.5 50 40 30 20 TJ = 25ºC 1.0 10 0.5 0 0 20 40 60 80 100 120 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 140 160 180 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFH69N30P IXFT69N30P Fig. 8. Transconductance Fig. 7. Input Admittance 90 80 80 70 60 g f s - Siemens 60 ID - Amperes TJ = - 40ºC 70 50 TJ = 125ºC 25ºC - 40ºC 40 30 25ºC 50 125ºC 40 30 20 20 10 10 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 10 20 30 VGS - Volts 50 60 70 80 90 Fig. 10. Gate Charge 10 180 9 160 8 140 7 VGS - Volts IS - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 200 120 100 80 60 40 ID - Amperes VDS = 150V I D = 34.5A I G = 10mA 6 5 4 3 TJ = 125ºC 2 40 TJ = 25ºC 20 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 1.3 20 40 60 80 100 120 140 160 QG - NanoCoulombs VSD - Volts Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1,000.0 10,000 100.0 ID - Amperes Capacitance - PicoFarads RDS(on) Limit Ciss 1,000 Coss 25µs 100µs 10.0 1ms 1.0 10ms 100ms TJ = 150ºC TC = 25ºC Single Pulse f = 1 MHz Crss 100 DC 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXFH69N30P IXFT69N30P Fig. 12. Maximum Transient Thermal Impedance 1.000 Z (th)JC - ºC / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: T_69N30P(7S)10-16-09-A