Advance Technical Information IXFH400N075T2 IXFT400N075T2 TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G Symbol Test Conditions VDSS TJ = 25°C to 175°C 75 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 75 V VGSS VGSM Continuous Transient ± 20 ± 30 V V ID25 TC = 25°C (Chip Capability) 400 A ILRMS Lead Current Limit, RMS 160 A IDM TC = 25°C, Pulse Width Limited by TJM 1000 A IA TC = 25°C 200 A EAS TC = 25°C 1.5 J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 15 V/ns PD TC = 25°C 1000 W Maximum Ratings -55 ... +175 °C TJM 175 °C Tstg -55 ... +175 °C 300 260 °C °C 1.13 / 10 Nm/lb.in. 6 4 g g TJ TL Tsold 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Md Mounting Torque (TO-247) Weight TO-247 TO-268 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 75 VGS(th) VDS = VGS, ID = 250μA 2.0 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V TJ = 150°C RDS(on) = 75V = 400A Ω ≤ 2.3mΩ VGS = 10V, ID = 100A, Notes 1 & 2 © 2009 IXYS CORPORATION, All Rights Reserved D D (Tab) S TO-268 (IXFT) G S D (Tab) G = Gate S = Source D = Drain Tab = Drain Features z International Standard Packages 175°C Operating Temperature z High Current Handling Capability z Avalanche Rated z Fast Intrinsic Diode z Low RDS(on) z Advantages z V 4.0 V ±200 nA 25 μA 1.5 mA 2.3 mΩ z z Easy to Mount Space Savings High Power Density Applications z z z DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching Applications DS100221(12/09) IXFH400N075T2 IXFT400N075T2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 60A, Note 1 80 130 S 24 nF 2770 pF 455 pF 1.33 Ω 35 ns 20 ns 67 ns 44 ns 420 nC 114 nC 130 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi td(on) tr td(off) tf Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 200A RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.15 °C/W RthJC RthCH TO-247 (IXFH) Outline TO-247 °C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 100A, VGS = 0V, Note 1 trr IF = 100A, VGS = 0V IRM QRM 77 -di/dt = 100A/μs VR = 37.5V 400 A 1200 A 1.2 V 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 (IXFT) Outline ns 5.4 A 210 nC Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Includes lead resistance. Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFH400N075T2 IXFT400N075T2 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 400 350 VGS = 15V 10V 8V 300 7V ID - Amperes ID - Amperes 7V 300 250 6V 200 150 250 6V 200 150 5V 100 5V 100 50 50 4V 4V 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ T J = 150ºC Fig. 4. RDS(on) Normalized to ID = 200A Value vs. Junction Temperature 350 2.4 VGS = 15V 10V 8V 7V 300 VGS = 10V 2.2 2.0 R DS(on) - Normalized 250 ID - Amperes VGS = 15V 10V 8V 350 6V 200 150 5V 100 I 1.8 D = 400A I 1.6 D = 200A 1.4 1.2 1.0 50 4V 0.8 0 0.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -50 -25 0 25 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 200A vs. Drain Current 75 100 125 150 175 Fig. 6. Drain Current vs. Case Temperature 2.4 180 2.2 160 External Lead Current limit 140 TJ = 175ºC 2.0 120 1.8 1.6 ID - Amperes R DS(on) - Normalized 50 TJ - Degrees Centigrade VGS = 10V 15V 1.4 100 80 60 1.2 40 TJ = 25ºC 1.0 20 0.8 0 0 50 100 150 200 250 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 300 350 400 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXFH400N075T2 IXFT400N075T2 Fig. 8. Transconductance Fig. 7. Input Admittance 240 220 TJ = - 40ºC 200 200 180 TJ = 150ºC 25ºC - 40ºC 140 120 g f s - Siemens ID - Amperes 160 100 80 25ºC 160 150ºC 120 80 60 40 40 20 0 0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0 6.0 20 40 60 80 VGS - Volts 120 140 160 180 200 220 240 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 350 VDS = 37.5V 9 300 I D = 200A 8 250 I G = 10mA 7 VGS - Volts IS - Amperes 100 200 150 TJ = 150ºC 6 5 4 3 100 TJ = 25ºC 2 50 1 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1.1 50 100 150 200 250 300 350 400 450 QG - NanoCoulombs VSD - Volts Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 10,000 100,000 RDS(on) Limit 1,000 Ciss 10,000 ID - Amperes Capacitance - PicoFarads f = 1 MHz Coss 1,000 25µs 100µs External Lead Limit 100 1ms 10 TJ = 175ºC 10ms 100ms TC = 25ºC Single Pulse Crss 100 DC 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 VDS - Volts 100 1000 IXFH400N075T2 IXFT400N075T2 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 70 70 RG = 1Ω , VGS = 10V 60 50 VDS = 37.5V 50 40 I D t r - Nanoseconds t r - Nanoseconds RG = 1Ω , VGS = 10V 60 VDS = 37.5V = 100A 30 I D = 200A TJ = 125ºC 40 30 20 20 10 10 TJ = 25ºC 0 0 25 35 45 55 65 75 85 95 105 115 40 125 60 80 100 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 120 55 200 300 80 200 60 I D = 100A 95 RG = 1Ω, VGS = 10V VDS = 37.5V 50 t f - Nanoseconds I D = 200A td(off) - - - - 90 45 85 40 80 I D = 100A I D = 200A 35 75 30 70 25 65 t d(off) - Nanoseconds VDS = 37.5V t d(on) - Nanoseconds t r - Nanoseconds 180 100 tf 100 100 40 0 20 20 1 2 3 4 5 6 7 8 9 25 10 35 45 55 RG - Ohms td(off) - - - - RG = 1Ω, VGS = 10V 600 110 500 TJ = 25ºC, 125ºC 35 80 30 70 25 60 20 120 105 115 60 125 140 160 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved td(off) - - - 500 TJ = 125ºC, VGS = 10V I D = 200A, 100A 180 50 200 400 400 300 300 200 200 100 100 0 0 1 2 3 4 5 6 RG - Ohms 7 8 9 10 t d(off) - Nanoseconds 90 100 95 600 tf t d(off) - Nanoseconds 100 40 80 85 VDS = 37.5V VDS = 37.5V 45 120 t f - Nanoseconds tf 50 60 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 55 40 65 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current t f - Nanoseconds 160 60 td(on) - - - - TJ = 125ºC, VGS = 10V 400 140 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 500 tr 120 ID - Amperes IXFH400N075T2 IXFT400N075T2 Fig. 19. Maximum Transient Thermal Impedance 1.000 Fig. 19. Maximum Transient Thermal Impedance dfafas 0.300 Z (th )J C - ºC / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_400N075T2(98)12-15-09