Preliminary Technical Information IXFA180N10T2 IXFP180N10T2 TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 100V = 180A Ω ≤ 6mΩ TO-263 AA (IXFA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 100 V TO-220AB (IXFP) VGSS Continuous ±20 V VGSM Transient ±30 V ID25 ILRMS IDM TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM 180 120 450 A A A G IA TC = 25°C 90 A EAS TC = 25°C 750 mJ G = Gate S = Source dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 15 V/ns PD TC = 25°C 480 W -55 ... +175 °C TJM 175 °C z Tstg -55 ... +175 °C z 300 260 °C °C 1.13 / 10 Nm/lb.in. 2.5 3.0 g g TJ TL Tsold 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 Seconds Md Mounting Torque (TO-220) Weight TO-263 TO-220 z z z z BVDSS VGS = 0V, ID = 250μA 100 VGS(th) VDS = VGS, ID = 250μA 2.0 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V 4.0 V ±100 nA TJ = 150°C RDS(on) z V VGS = 10V, ID = 50A, Notes 1, 2 © 2010 IXYS CORPORATION, All Rights Reserved 10 μA 750 μA 6 mΩ D = Drain Tab = Drain International Standard Packages Avalanche Rated 175°C Operating Temperature High Current Handling Capability Fast Intrinsic Rectifier Low RDS(on) Advantages z Characteristic Values Min. Typ. Max. D (Tab) Features z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) DS Easy to Mount Space Savings High Power Density Applications z z z z z z z DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications DS100266A(09/10) IXFA180N10T2 IXFP180N10T2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 50 VDS = 10V, ID = 60A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) 88 S 10.5 nF 945 pF 100 pF 21 ns 37 ns 34 ns 13 ns 185 nC 48 nC 52 nC Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2Ω (External) tf Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.31 °C/W RthJC RthCH TO-263 Outline TO-220 °C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 180 A ISM Repetitive, Pulse Width Limited by TJM 720 A VSD IF = 100A, VGS = 0V, Note 1 1.3 V trr IF = 0.5 • ID25, VGS = 0V IRM QRM -di/dt = 100A/μs VR = 0.5 • VDSS 66 ns 5.8 A 190 nC TO-220 Outline Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. On through-hole package, RDS(on) Kelvin test contact location must be 5mm or less from the package body. Pins: 1 - Gate 3 - Source 2 - Drain PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFA180N10T2 IXFP180N10T2 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 180 350 VGS = 15V 10V 9V 8V 160 140 VGS = 15V 10V 8V 300 250 7V ID - Amperes ID - Amperes 120 100 80 6V 7V 200 150 6V 60 100 40 50 20 5V 5V 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 1 2 3 180 6 7 8 3.0 VGS = 15V 10V 9V 8V 140 VGS = 10V 2.6 7V R DS(on) - Normalized 160 ID - Amperes 5 Fig. 4. RDS(on) Normalized to ID = 90A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 150ºC 120 6V 100 80 60 40 5V 2.2 I D = 180A 1.8 I D = 90A 1.4 1.0 0.6 20 0 0.2 0 0.5 1 1.5 2 2.5 3 -50 -25 0 VDS - Volts 50 75 100 125 150 175 Fig. 6. Drain Current vs. Case Temperature 140 External Lead Current Limit VGS = 10V 3.0 25 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 90A Value vs. Drain Current 3.4 120 15V - - - - - TJ = 175ºC 100 2.6 ID - Amperes R DS(on) - Normalized 4 VDS - Volts VDS - Volts 2.2 1.8 1.4 80 60 40 TJ = 25ºC 20 1.0 0 0.6 0 40 80 120 160 200 240 ID - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 280 320 360 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 175 IXFA180N10T2 IXFP180N10T2 Fig. 8. Transconductance Fig. 7. Input Admittance 200 160 180 140 TJ = - 40ºC 160 120 25ºC g f s - Siemens ID - Amperes 140 TJ = 150ºC 25ºC - 40ºC 120 100 80 100 150ºC 80 60 60 40 40 20 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 20 40 60 80 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 120 140 160 180 200 Fig. 10. Gate Charge 300 10 250 9 VDS = 50V 8 I G = 10mA I D = 90A 7 200 VGS - Volts IS - Amperes 100 ID - Amperes 150 TJ = 150ºC 100 6 5 4 3 TJ = 25ºC 2 50 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 1.3 20 40 60 80 100 120 140 160 180 QG - NanoCoulombs VSD - Volts Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 1000 100,000 100µs f = 1 MHz RDS(on) Limit 25µs 1ms Ciss 100 ID - Amperes Capacitance - PicoFarads 10ms 10,000 1,000 Coss 100ms DC 10 100 TC = 175ºC Crss T J = 25ºC Single Pulse 1 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 VDS - Volts 100 IXFA180N10T2 IXFP180N10T2 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 55 45 RG = 2Ω , VGS = 10V 40 VDS = 50V 35 t r - Nanoseconds t r - Nanoseconds 50 30 25 I 20 15 I D D Fig. 14. Resistive Turn-on Rise Time vs. Drain Current = 90A = 45A 50 RG = 2Ω , VGS = 10V 45 VDS = 50V TJ = 25ºC 40 35 30 25 20 10 15 5 10 0 TJ = 125ºC 5 25 35 45 55 65 75 85 95 105 115 125 90 100 110 120 TJ - Degrees Centigrade 20 26 23 16 22 15 21 14 20 13 19 3 4 5 6 7 8 9 10 11 12 13 14 td(off) - - - - - 16 40 15 14 36 I D = 180A 13 32 11 30 10 25 35 45 55 tf 105 115 28 125 TJ = 125ºC 14 42 38 13 TJ = 25ºC 12 34 30 11 150 ID - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 160 170 26 180 td(off) - - - - - TJ = 125ºC, VGS = 10V 44 VDS = 50V t f - Nanoseconds t f - Nanoseconds 95 15 42 14 40 I D = 180A, 90A 13 38 12 36 2 3 4 5 6 7 8 9 RG - Ohms 10 11 12 13 14 15 t d(off) - Nanoseconds 15 140 85 46 16 t d(off) - Nanoseconds VDS = 50V 130 75 17 46 120 65 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance td(off) - - - - - RG = 2Ω, VGS = 10V 110 34 12 15 50 100 38 I D = 90A TJ - Degrees Centigrade 17 90 42 VDS = 50V Fig. 17. Resistive Turn-off Switching Times vs. Drain Current tf 180 44 RG = 2Ω, VGS = 10V RG - Ohms 16 170 t d(off) - Nanoseconds 24 I D = 90A, 180A 2 tf 17 VDS = 50V 17 160 46 18 25 t d(on) - Nanoseconds t r - Nanoseconds td(on) - - - - - TJ = 125ºC, VGS = 10V 18 150 19 t f - Nanoseconds tr 140 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 19 130 ID - Amperes IXFA180N10T2 IXFP180N10T2 Fig. 19. Maximum Transient Thermal Impedance 1 Z (th)JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXF_180N10T2 (6V)01-02-09