Preliminary Technical Information IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 Depletion Mode MOSFET VDSX ID(on) RDS(on) N-Channel = > ≤ 1000V 1.6A 10Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings 1000 V Continuous ±20 V VGSM Transient ±30 V PD TC = 25°C 100 W - 55 ... +150 150 - 55 ... +150 °C °C °C 300 260 °C °C 1.13 / 10 Nm/lb.in. 0.35 2.50 3.00 g g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-220) Weight TO-252 TO-263 TO-220 TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) G DS G = Gate S = Source D (Tab) D = Drain Tab = Drain Features Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSX VGS = - 5V, ID = 250μA VGS(off) VDS = 25V, ID = 100μA IGSX VGS = ±20V, VDS = 0V IDSX(off) VDS = VDSX, VGS= - 5V RDS(on) VGS = 0V, ID = 0.8A, Note 1 ID(on) VGS = 0V, VDS = 50V, Note 1 • Normally ON Mode • International Standard Packages • Molding Epoxies Meet UL 94 V-0 Flammability Classification Characteristic Values Min. Typ. Max. 1000 - 2.5 - 4.5 V Advantages V • Easy to Mount • Space Savings • High Power Density ±100 nA 2 μA 25 μA TJ = 125°C © 2009 IXYS CORPORATION, All Rights Reserved 10 1.6 Ω A Applications • • • • • • Audio Amplifiers Start-Up Circuits Protection Circuits Ramp Generators Current Regulators Active Loads DS100185A(12/09) IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 30V, ID = 0.8A, Note 1 0.65 Ciss 1.10 S 645 pF 43 pF 11 pF 27 ns 65 ns 34 ns 41 ns 27.0 nC 1.6 nC 13.5 0.50 VGS = -10V, VDS = 25V, f = 1MHz Coss Crss td(on) Resistive Switching Times tr VGS = ±5V, VDS = 500V, ID = 0.8A td(off) RG = 5Ω (External) tf Qg(on) Qgs VGS = 5V, VDS = 500V, ID = 0.8A Qgd RthJC RthCS TO-220 TO-252 AA (IXTY) Outline Dim. Millimeter Min. Max. Inches Min. Max. nC A A1 2.19 0.89 2.38 1.14 0.086 0.035 0.094 0.045 1.25 °C/W °C/W A2 b 0 0.64 0.13 0.89 0 0.025 0.005 0.035 b1 b2 0.76 5.21 1.14 5.46 0.030 0.205 0.045 0.215 c c1 0.46 0.46 0.58 0.58 0.018 0.018 0.023 0.023 D D1 5.97 4.32 6.22 5.21 0.235 0.170 0.245 0.205 E E1 6.35 4.32 6.73 5.21 0.250 0.170 0.265 0.205 Safe-Operating-Area Specification Characteristic Values Min. Typ. Max. Symbol Test Conditions SOA VDS = 800V, ID = 75mA, TC = 75°C, Tp = 5s 60 W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VSD trr IRM QRM Characteristic Values Min. Typ. Max. IF = 1.6A, VGS = -10V, Note 1 0.8 1.3 970 9.96 4.80 IF = 1.6A, -di/dt = 100A/μs VR = 100V, VGS = -10V 1. Gate 2. Drain 3. Source 4. Drain Bottom Side V e e1 2.28 BSC 4.57 BSC H L 9.40 10.42 0.51 1.02 0.370 0.020 0.410 0.040 L1 L2 L3 0.64 0.89 2.54 0.025 0.035 0.100 0.040 0.050 0.115 1.02 1.27 2.92 0.090 BSC 0.180 BSC TO-220 (IXTP) Outline ns A μC Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. TO-263 (IXTA) Outline 1. 2. 3. 4. Gate Drain Source Drain Bottom Side Dim. Millimeter Min. Max. Inches Min. Max. A b b2 4.06 0.51 1.14 4.83 0.99 1.40 .160 .020 .045 .190 .039 .055 c c2 0.40 1.14 0.74 1.40 .016 .045 .029 .055 D D1 8.64 8.00 9.65 8.89 .340 .280 .380 .320 E 9.65 10.41 .380 .405 E1 e L L1 L2 L3 L4 6.22 2.54 14.61 2.29 1.02 1.27 0 8.13 BSC 15.88 2.79 1.40 1.78 0.13 .270 .100 .575 .090 .040 .050 0 .320 BSC .625 .110 .055 .070 .005 Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 4.0 1.6 VGS = 5V 1V 0V 1.4 VGS = 5V 2V 1V 3.5 1.2 3.0 1.0 2.5 ID - Amperes ID - Amperes 0V -1V 0.8 0.6 0.4 2.0 -1V 1.5 1.0 - 2V 0.2 - 2V 0.5 - 3V 0.0 - 3V 0.0 0 2 4 6 8 10 12 14 0 10 20 30 VDS - Volts Fig. 3. Output Characteristics @ T J = 125ºC VGS = 5V 1V 0V 70 80 VGS = - 3.25V 1E-02 - 3.50V 1E-03 - 3.75V -1V 1.0 ID - Amperes ID - Amperes 60 1E-01 1.2 0.8 0.6 - 2V 0.4 1E-04 - 4.00V 1E-05 - 4.25V 1E-06 - 4.50V 1E-07 0.2 - 4.75V 1E-08 - 3V 0.0 1E-09 0 4 8 12 16 20 24 28 32 0 100 200 300 VDS - Volts 400 500 600 700 800 900 1000 1100 1200 VDS - Volts Fig. 5. Drain Current @ T J = 100ºC Fig. 6. Dynamic Resistance vs. Gate Voltage 1.E+12 1.E-01 - 3.75V 1.E+10 - 4.00V 1.E+09 1.E-04 - 4.25V 1.E-05 - 4.50V - 4.75V 1.E-06 R O - Ohms 1.E-03 ∆VDS = 700V - 100V 1.E+11 VGS = - 3.50V 1.E-02 ID - Amperes 50 Fig. 4. Drain Current @ T J = 25ºC 1.6 1.4 40 VDS - Volts TJ = 25ºC 1.E+08 1.E+07 TJ = 100ºC 1.E+06 1.E+05 1.E-07 1.E+04 0 100 200 300 400 500 600 700 800 VDS - Volts © 2009 IXYS CORPORATION, All Rights Reserved 900 1000 1100 1200 -4.8 -4.6 -4.4 -4.2 -4.0 VGS - Volts -3.8 -3.6 -3.4 -3.2 IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 Fig. 8. RDS(on) Normalized to ID = 0.8A Value vs. Drain Current Fig. 7. Normalized RDS(on) vs. Junction Temperature 2.6 2.6 VGS = 0V VGS = 0V 2.4 I D = 0.8A 5V - - - - 2.2 R DS(on) - Normalized R DS(on) - Normalized 2.2 1.8 1.4 1.0 2.0 TJ = 125ºC 1.8 1.6 1.4 1.2 TJ = 25ºC 1.0 0.6 0.8 0.2 0.6 -50 -25 0 25 50 75 100 125 0.0 150 0.5 1.0 1.5 TJ - Degrees Centigrade 2.0 2.5 3.0 ID - Amperes Fig. 10. Transconductance Fig. 9. Input Admittance 2.5 2.2 VDS= 30V 2.0 VDS= 30V TJ = - 40ºC 1.8 2.0 g f s - Siemens ID - Amperes 1.6 1.5 TJ = 125ºC 25ºC - 40ºC 1.0 25ºC 1.4 1.2 125ºC 1.0 0.8 0.6 0.5 0.4 0.2 0.0 -4.0 0.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0 0.0 0.5 1 1.5 2 VGS - Volts ID - Amperes Fig. 11. Breakdown and Threshold Voltages vs. Junction Temperature Fig. 12. Forward Voltage Drop of Intrinsic Diode 1.3 2.5 5 VGS= -10V 4 VGS(off) @ VDS = 25V IS - Amperes BV / VGS(off) - Normalized 1.2 1.1 BVDSX @ VGS = - 5V 1.0 3 2 TJ = 125ºC 1 0.9 TJ = 25ºC 0 0.8 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.3 0.4 0.5 0.6 VSD - Volts 0.7 0.8 0.9 IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 Fig. 13. Capacitance Fig. 14. Gate Charge 5 10,000 f = 1 MHz I D = 0.8A 3 Ciss 1,000 I G = 1mA 2 100 VGS - Volts Capacitance - PicoFarads VDS = 500V 4 Coss 1 0 -1 -2 10 -3 Crss -4 -5 1 0 5 10 15 20 25 30 35 0 40 5 10 VDS - Volts 15 20 25 QG - NanoCoulombs Fig. 15. Forward-Bias Safe Operating Area Fig. 16. Forward-Bias Safe Operating Area @ T C = 25ºC @ T C = 75ºC 10.00 10.00 RDS(on) Limit RDS(on) Limit 25µs 100µs 1.00 100µs ID - Amperes ID - Amperes 1.00 1ms 10ms 100ms 0.10 1ms 10ms 0.10 DC 100ms TJ = 150ºC TJ = 150ºC TC = 25ºC Single Pulse TC = 75ºC Single Pulse DC Fig. 17. Maximum Transient Thermal Impedance 0.01 10.00 10 0.01 100 1,000 10 100 VDS - Volts 1,000 VDS - Volts Fig. 17. Maximum Transient Thermal Impedance hvjv 2.00 Z (th)JC - ºC / W 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: T_1R6N100D2(2C)8-24-09