IXYS IXTA1R6N100D2

Preliminary Technical Information
IXTY1R6N100D2
IXTA1R6N100D2
IXTP1R6N100D2
Depletion Mode
MOSFET
VDSX
ID(on)
RDS(on)
N-Channel
=
>
≤
1000V
1.6A
10Ω
Ω
TO-252 (IXTY)
G
S
D (Tab)
Symbol
Test Conditions
VDSX
TJ = 25°C to 150°C
VGSX
Maximum Ratings
1000
V
Continuous
±20
V
VGSM
Transient
±30
V
PD
TC = 25°C
100
W
- 55 ... +150
150
- 55 ... +150
°C
°C
°C
300
260
°C
°C
1.13 / 10
Nm/lb.in.
0.35
2.50
3.00
g
g
g
TJ
TJM
Tstg
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Md
Mounting Torque (TO-220)
Weight
TO-252
TO-263
TO-220
TO-263 AA (IXTA)
G
S
D (Tab)
TO-220AB (IXTP)
G
DS
G = Gate
S = Source
D (Tab)
D
= Drain
Tab = Drain
Features
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSX
VGS = - 5V, ID = 250μA
VGS(off)
VDS = 25V, ID = 100μA
IGSX
VGS = ±20V, VDS = 0V
IDSX(off)
VDS = VDSX, VGS= - 5V
RDS(on)
VGS = 0V, ID = 0.8A, Note 1
ID(on)
VGS = 0V, VDS = 50V, Note 1
• Normally ON Mode
• International Standard Packages
• Molding Epoxies Meet UL 94 V-0
Flammability Classification
Characteristic Values
Min.
Typ.
Max.
1000
- 2.5
- 4.5
V
Advantages
V
• Easy to Mount
• Space Savings
• High Power Density
±100 nA
2 μA
25 μA
TJ = 125°C
© 2009 IXYS CORPORATION, All Rights Reserved
10
1.6
Ω
A
Applications
•
•
•
•
•
•
Audio Amplifiers
Start-Up Circuits
Protection Circuits
Ramp Generators
Current Regulators
Active Loads
DS100185A(12/09)
IXTY1R6N100D2 IXTA1R6N100D2
IXTP1R6N100D2
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
Characteristic Values
Min.
Typ.
Max.
VDS = 30V, ID = 0.8A, Note 1
0.65
Ciss
1.10
S
645
pF
43
pF
11
pF
27
ns
65
ns
34
ns
41
ns
27.0
nC
1.6
nC
13.5
0.50
VGS = -10V, VDS = 25V, f = 1MHz
Coss
Crss
td(on)
Resistive Switching Times
tr
VGS = ±5V, VDS = 500V, ID = 0.8A
td(off)
RG = 5Ω (External)
tf
Qg(on)
Qgs
VGS = 5V, VDS = 500V, ID = 0.8A
Qgd
RthJC
RthCS
TO-220
TO-252 AA (IXTY) Outline
Dim.
Millimeter
Min. Max.
Inches
Min.
Max.
nC
A
A1
2.19
0.89
2.38
1.14
0.086
0.035
0.094
0.045
1.25 °C/W
°C/W
A2
b
0
0.64
0.13
0.89
0
0.025
0.005
0.035
b1
b2
0.76
5.21
1.14
5.46
0.030
0.205
0.045
0.215
c
c1
0.46
0.46
0.58
0.58
0.018
0.018
0.023
0.023
D
D1
5.97
4.32
6.22
5.21
0.235
0.170
0.245
0.205
E
E1
6.35
4.32
6.73
5.21
0.250
0.170
0.265
0.205
Safe-Operating-Area Specification
Characteristic Values
Min.
Typ.
Max.
Symbol
Test Conditions
SOA
VDS = 800V, ID = 75mA, TC = 75°C, Tp = 5s
60
W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
VSD
trr
IRM
QRM
Characteristic Values
Min.
Typ.
Max.
IF = 1.6A, VGS = -10V, Note 1
0.8
1.3
970
9.96
4.80
IF = 1.6A, -di/dt = 100A/μs
VR = 100V, VGS = -10V
1. Gate
2. Drain
3. Source
4. Drain
Bottom Side
V
e
e1
2.28 BSC
4.57 BSC
H
L
9.40 10.42
0.51 1.02
0.370
0.020
0.410
0.040
L1
L2
L3
0.64
0.89
2.54
0.025
0.035
0.100
0.040
0.050
0.115
1.02
1.27
2.92
0.090 BSC
0.180 BSC
TO-220 (IXTP) Outline
ns
A
μC
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
TO-263 (IXTA) Outline
1.
2.
3.
4.
Gate
Drain
Source
Drain
Bottom Side
Dim.
Millimeter
Min.
Max.
Inches
Min. Max.
A
b
b2
4.06
0.51
1.14
4.83
0.99
1.40
.160
.020
.045
.190
.039
.055
c
c2
0.40
1.14
0.74
1.40
.016
.045
.029
.055
D
D1
8.64
8.00
9.65
8.89
.340
.280
.380
.320
E
9.65
10.41
.380
.405
E1
e
L
L1
L2
L3
L4
6.22
2.54
14.61
2.29
1.02
1.27
0
8.13
BSC
15.88
2.79
1.40
1.78
0.13
.270
.100
.575
.090
.040
.050
0
.320
BSC
.625
.110
.055
.070
.005
Pins:
1 - Gate
3 - Source
2 - Drain
4 - Drain
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTY1R6N100D2 IXTA1R6N100D2
IXTP1R6N100D2
Fig. 1. Output Characteristics @ T J = 25ºC
Fig. 2. Extended Output Characteristics @ T J = 25ºC
4.0
1.6
VGS = 5V
1V
0V
1.4
VGS = 5V
2V
1V
3.5
1.2
3.0
1.0
2.5
ID - Amperes
ID - Amperes
0V
-1V
0.8
0.6
0.4
2.0
-1V
1.5
1.0
- 2V
0.2
- 2V
0.5
- 3V
0.0
- 3V
0.0
0
2
4
6
8
10
12
14
0
10
20
30
VDS - Volts
Fig. 3. Output Characteristics @ T J = 125ºC
VGS = 5V
1V
0V
70
80
VGS = - 3.25V
1E-02
- 3.50V
1E-03
- 3.75V
-1V
1.0
ID - Amperes
ID - Amperes
60
1E-01
1.2
0.8
0.6
- 2V
0.4
1E-04
- 4.00V
1E-05
- 4.25V
1E-06
- 4.50V
1E-07
0.2
- 4.75V
1E-08
- 3V
0.0
1E-09
0
4
8
12
16
20
24
28
32
0
100
200
300
VDS - Volts
400
500
600
700
800
900
1000 1100 1200
VDS - Volts
Fig. 5. Drain Current @ T J = 100ºC
Fig. 6. Dynamic Resistance vs. Gate Voltage
1.E+12
1.E-01
- 3.75V
1.E+10
- 4.00V
1.E+09
1.E-04
- 4.25V
1.E-05
- 4.50V
- 4.75V
1.E-06
R O - Ohms
1.E-03
∆VDS = 700V - 100V
1.E+11
VGS = - 3.50V
1.E-02
ID - Amperes
50
Fig. 4. Drain Current @ T J = 25ºC
1.6
1.4
40
VDS - Volts
TJ = 25ºC
1.E+08
1.E+07
TJ = 100ºC
1.E+06
1.E+05
1.E-07
1.E+04
0
100
200
300
400
500
600
700
800
VDS - Volts
© 2009 IXYS CORPORATION, All Rights Reserved
900
1000 1100 1200
-4.8
-4.6
-4.4
-4.2
-4.0
VGS - Volts
-3.8
-3.6
-3.4
-3.2
IXTY1R6N100D2 IXTA1R6N100D2
IXTP1R6N100D2
Fig. 8. RDS(on) Normalized to ID = 0.8A Value
vs. Drain Current
Fig. 7. Normalized RDS(on) vs. Junction Temperature
2.6
2.6
VGS = 0V
VGS = 0V
2.4
I D = 0.8A
5V - - - -
2.2
R DS(on) - Normalized
R DS(on) - Normalized
2.2
1.8
1.4
1.0
2.0
TJ = 125ºC
1.8
1.6
1.4
1.2
TJ = 25ºC
1.0
0.6
0.8
0.2
0.6
-50
-25
0
25
50
75
100
125
0.0
150
0.5
1.0
1.5
TJ - Degrees Centigrade
2.0
2.5
3.0
ID - Amperes
Fig. 10. Transconductance
Fig. 9. Input Admittance
2.5
2.2
VDS= 30V
2.0
VDS= 30V
TJ = - 40ºC
1.8
2.0
g f s - Siemens
ID - Amperes
1.6
1.5
TJ = 125ºC
25ºC
- 40ºC
1.0
25ºC
1.4
1.2
125ºC
1.0
0.8
0.6
0.5
0.4
0.2
0.0
-4.0
0.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0
0.0
0.5
1
1.5
2
VGS - Volts
ID - Amperes
Fig. 11. Breakdown and Threshold Voltages
vs. Junction Temperature
Fig. 12. Forward Voltage Drop of
Intrinsic Diode
1.3
2.5
5
VGS= -10V
4
VGS(off) @ VDS = 25V
IS - Amperes
BV / VGS(off) - Normalized
1.2
1.1
BVDSX @ VGS = - 5V
1.0
3
2
TJ = 125ºC
1
0.9
TJ = 25ºC
0
0.8
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.3
0.4
0.5
0.6
VSD - Volts
0.7
0.8
0.9
IXTY1R6N100D2 IXTA1R6N100D2
IXTP1R6N100D2
Fig. 13. Capacitance
Fig. 14. Gate Charge
5
10,000
f = 1 MHz
I D = 0.8A
3
Ciss
1,000
I G = 1mA
2
100
VGS - Volts
Capacitance - PicoFarads
VDS = 500V
4
Coss
1
0
-1
-2
10
-3
Crss
-4
-5
1
0
5
10
15
20
25
30
35
0
40
5
10
VDS - Volts
15
20
25
QG - NanoCoulombs
Fig. 15. Forward-Bias Safe Operating Area
Fig. 16. Forward-Bias Safe Operating Area
@ T C = 25ºC
@ T C = 75ºC
10.00
10.00
RDS(on) Limit
RDS(on) Limit
25µs
100µs
1.00
100µs
ID - Amperes
ID - Amperes
1.00
1ms
10ms
100ms
0.10
1ms
10ms
0.10
DC
100ms
TJ = 150ºC
TJ = 150ºC
TC = 25ºC
Single Pulse
TC = 75ºC
Single Pulse
DC
Fig. 17. Maximum Transient Thermal Impedance
0.01
10.00
10
0.01
100
1,000
10
100
VDS - Volts
1,000
VDS - Volts
Fig. 17. Maximum Transient Thermal Impedance
hvjv
2.00
Z (th)JC - ºC / W
1.00
0.10
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_1R6N100D2(2C)8-24-09