Preliminary Technical Information IXTN60N50L2 Linear L2TM Power MOSFET VDSS ID25 = = ≤ RDS(on) N-Channel Enhancement Mode Extended FBSOA 500V 53A Ω 100mΩ miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 500 V G VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM IA EAS PD 53 A 150 A TC = 25°C TC = 25°C 60 3 A J TC = 25°C 735 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10s VISOL 50/60 Hz, RMS IISOL ≤ 1mA Md Mounting torque Terminal Connection torque t = 1 minute t = 1 second Weight Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 500 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 30A Note 1 TJ = 125°C © 2008 IXYS CORPORATION, All rights reserved V 4.5 V ±200 nA S D G = Gate S = Source D = Drain Either source terminal S can be used as the source terminal or the Kelvin source (gate return) terminal. Features • Designed for linear operation • International standard package • Molding epoxy meets UL94 V-0 flammability classification • miniBLOC with Aluminium nitride isolation Applications Programmable loads Current regulators DC-DC converters Battery chargers DC choppers Temperature and lighting controls • • • • • • Advantages • Easy to mount • Space savings • High power density 50 μA 5 mA 100 mΩ DS100086(12/08) IXTN60N50L2 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. gfs 18 VDS = 10V, ID = 30A, Note 1 25 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf RG = 0.5Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 30A Qgd S 24 nF 1325 pF 172 pF 40 ns 40 ns 165 ns 38 ns 610 nC 130 nC 365 nC Resistive Switching Times VGS = 15V, VDS = 0.5 • VDSS, ID = 30A 32 SOT-227B (IXTN) Outline (M4 screws (4x) supplied) 0.17 °C/W RthJC RthCS 0.05 °C/W Safe Operating Area Specification Symbol Test Conditions Min. SOA VDS = 400V, ID = 0.9A, TC = 75°C, tp = 3s 360 Typ. Max. W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, pulse width limited by TJM VSD IF = IS, VGS = 0V, Note 1 trr IRM IF = 60A, -di/dt = 100A/μs QRM VR = 100V, VGS = 0V 60 A 240 A 1.5 V 980 73 ns A 35.8 μC Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTN60N50L2 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 60 160 VGS = 20V 14V 12V 10V 55 50 9V 120 40 ID - Amperes ID - Amperes 45 VGS = 20V 14V 12V 140 8V 35 30 25 7V 20 10V 100 9V 80 60 8V 15 40 10 7V 6V 20 5 5V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 6V 0 4.5 5.0 0 5 10 25 30 Fig. 4. RDS(on) Normalized to ID = 30A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 60 2.8 VGS = 20V 12V 10V 9V 50 45 2.6 VGS = 10V 2.4 RDS(on) - Normalized 55 ID - Amperes 20 VDS - Volts VDS - Volts 8V 40 35 30 7V 25 20 15 2.2 2.0 I D = 60A 1.8 I D = 30A 1.6 1.4 1.2 1.0 6V 10 0.8 5V 5 0.6 0 0.4 0 1 2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 30A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 2.8 60 VGS = 10V 2.6 20V 55 ---- 50 TJ = 125ºC 2.4 45 2.2 ID - Amperes RDS(on) - Normalized 15 2.0 1.8 1.6 TJ = 25ºC 1.4 40 35 30 25 20 15 1.2 10 1.0 5 0.8 0 0 20 40 60 80 100 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 120 140 160 -50 -25 0 25 50 75 100 125 150 TC - Degrees Centigrade IXYS REF: T_60N50L2(9R)01-20-09-C IXTN60N50L2 Fig. 7. Input Admittance Fig. 8. Transconductance 100 55 90 50 80 45 60 g f s - Siemens ID - Amperes TJ = - 40ºC 25ºC 125ºC 40 70 TJ = 125ºC 25ºC - 40ºC 50 40 30 35 30 25 20 15 20 10 10 5 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 0 9.5 10 20 30 40 VGS - Volts 50 60 70 80 90 100 110 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 200 16 180 14 160 VDS = 250V I D = 30A I G = 10mA 12 VGS - Volts IS - Amperes 140 120 100 80 10 8 6 TJ = 125ºC 60 4 TJ = 25ºC 40 2 20 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 100 200 VSD - Volts 300 400 500 600 700 800 900 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1.000 Ciss 10,000 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz Coss 1,000 0.100 0.010 Crss 100 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTN60N50L2 Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Forward-Bias Safe Operating Area @ T C = 25ºC @ T C = 75ºC 1,000.0 1,000.0 RDS(on) Limit RDS(on) Limit 100.0 100.0 100µs ID - Amperes ID - Amperes 25µs 1ms 10.0 10ms 25µs 100µs 10.0 1ms 10ms 100ms 1.0 DC TJ = 150ºC 100ms 1.0 TJ = 150ºC TC = 25ºC Single Pulse DC TC = 75ºC Single Pulse 0.1 0.1 10 100 VDS - Volts © 2008 IXYS CORPORATION, All rights reserved 1000 10 100 1000 VDS - Volts IXYS REF: T_60N50L2(9R)01-20-09-C