Preliminary Technical Information IXTT1N450HV High Voltage Power MOSFET VDSS ID25 RDS(on) = 4500V = 1A Ω ≤ 85Ω N-Channel Enhancement Mode TO-268 (IXTT) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 4500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 4500 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 1 A IDM TC = 25°C, Pulse Width Limited by TJM 3 A PD TC = 25°C 520 W - 55 ... +150 150 - 55 ... +150 °C °C °C Features 300 260 °C °C z 4 g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s Weight D (Tab) G = Gate S = Source z D = Drain Tab = Drain High Blocking Voltage High Voltage Package Advantages z z z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Applications Characteristic Values Min. Typ. Max. 6.0 z VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ±20V, VDS = 0V ±100 nA IDSS VDS = 3.6kV, VGS = 0V VDS = 4.5kV VDS = 3.6kV 10 μA 50 μA μA RDS(on) 3.5 V z z TJ = 100°C VGS = 10V, ID = 50mA, Note 1 © 2013 IXYS CORPORATION, All Rights Reserved 25 85 Easy to Mount Space Savings High Power Density z High Voltage Power Supplies Capacitor Discharge Applications Pulse Circuits Laser and X-Ray Generation Systems Ω DS100500A(04/13) IXTT1N450HV Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 50V, ID = 200mA, Note 1 0.28 Ciss Coss TO-268 (HV) Outline 0.46 S 1730 pF VGS = 0V, VDS = 25V, f = 1MHz Crss 78 pF 28 pF RGi Gate Input Resistance 21 Ω td(on) Resistive Switching Times 34 ns 60 ns 58 ns 127 ns 40 nC 10 nC 20 nC tr td(off) tf VGS = 10V, VDS = 500V, ID = 0.5 • ID25 RG = 10Ω (External) Qg(on) Qgs VGS = 10V, VDS = 1kV, ID = 0.5 • ID25 Qgd PINS: 1 - Gate 2 - Source 3 - Drain 0.24 °C/W RthJC Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 1 A ISM Repetitive, Pulse Width Limited by TJM 5 A VSD IF = 1A, VGS = 0V, Note 1 2.0 V trr IF = 1A, -di/dt = 50A/μs, VR = 100V Note 1.75 μs 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTT1N450HV Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 1.0 VGS = 10V 9V 0.9 1.2 0.8 VGS = 10V 8V 1.0 8V 0.6 ID - Amperes ID - Amperes 0.7 7V 0.5 0.4 0.8 0.6 7V 0.4 0.3 0.2 0.2 6.5V 0.1 6V 6V 0.0 0.0 0 10 20 30 40 50 60 70 0 80 50 100 150 250 300 Fig. 4. RDS(on) Normalized to ID = 0.5A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 2.6 1.0 VGS = 10V 7V 0.9 VGS = 10V 2.2 R DS(on) - Normalized 0.8 0.7 ID - Amperes 200 VDS - Volts VDS - Volts 0.6 0.5 0.4 6V 0.3 0.2 I D = 1A 1.8 I D = 0.5A 1.4 1.0 0.6 0.1 5V 0.0 0.2 0 20 40 60 80 100 120 140 -50 160 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 0.5A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 2.2 1.0 VGS = 10V 2.0 0.8 ID - Amperes R DS(on) - Normalized TJ = 125ºC 1.8 1.6 1.4 1.2 0.6 0.4 TJ = 25ºC 0.2 1.0 0.8 0.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 ID - Amperes © 2013 IXYS CORPORATION, All Rights Reserved 0.9 1 1.1 1.2 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTT1N450HV Fig. 7. Input Admittance Fig. 8. Transconductance 1.2 0.7 TJ = - 40ºC 0.6 1.0 0.4 TJ = 125ºC 0.3 25ºC 25ºC 0.8 g f s - Siemens ID - Amperes 0.5 125ºC 0.6 0.4 - 40ºC 0.2 0.2 0.1 0.0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0.0 7.5 0.1 0.2 0.3 VGS - Volts 0.4 0.5 0.6 0.7 ID - Amperes Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 3.0 VDS = 1000V 9 2.5 I D = 500mA 8 I G = 1mA 2.0 VGS - Volts IS - Amperes 7 TJ = 125ºC 1.5 1.0 TJ = 25ºC 6 5 4 3 2 0.5 1 0 0.0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 1.1 5 10 VSD - Volts 15 20 25 30 35 40 45 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1 10,000 Ciss 1,000 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz Coss 100 0.1 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTT1N450HV Fig. 14. Forward-Bias Safe Operating Area Fig. 13. Forward-Bias Safe Operating Area @ T C = 75ºC @ T C = 25ºC 10 10 RDS(on) Limit RDS(on) Limit 25µs 100µs 25µs 1 1ms 10ms 0.1 100µs ID - Amperes ID - Amperes 1 1ms 10ms 0.1 100ms 100ms DC TJ = 150ºC TJ = 150ºC TC = 25ºC Single Pulse 0.01 100 DC TC = 75ºC Single Pulse 1,000 VDS - Volts © 2013 IXYS CORPORATION, All Rights Reserved 10,000 0.01 100 1,000 10,000 VDS - Volts IXYS REF: T_1N450(H7)10-09-12