Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated VDSS ID25 S G D(TAB) D D(TAB) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C - 200 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ - 200 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C - 26 A IDM TC = 25°C, pulse width limited by TJM - 70 A IAR TC = 25°C - 26 A EAR TC = 25°C 50 mJ EAS TC = 25°C 1.5 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 10 V/ns PD TC = 25°C 300 W -55 ... +175 175 -55 ... +175 °C °C °C z 300 260 °C °C z 1.13/10 Nm/lb.in. 6.0 5.5 3.0 2.5 g g g g TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Md Mounting torque Weight TO-247 TO-3P TO-220 TO-263 (TO-3P,TO-220,TO-247) G z z z z z z z z z - 200 VGS(th) VDS = VGS, ID = -250μA - 2.5 IGSS VGS = ±20V, VDS = 0V ±100 nA z IDSS VDS = VDSS VGS = 0V - 10 μA - 250 μA z RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 170 mΩ z TJ = 150°C V International standard packages Fast intrinsic diode Dynamic dV/dt Rated Avalanche Rated Rugged PolarPTM process Low QG and Rds(on) characterization Low Drain-to-Tab capacitance Low package inductance - easy to drive and to protect Hight side switching Push-pull amplifiers DC Choppers Current regulators Automatic test equipment Advantages: z © 2007 IXYS CORPORATION, All rights reserved D = Drain TAB = Drain Applications: VGS = 0V, ID = -250 μA V D(TAB) S Features: BVDSS - 4.5 D G = Gate S = Source z Characteristic Values Min. Typ. Max. D(TAB) D S TO-3P (IXTQ) z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) - 200V - 26A Ω 170mΩ TO-220 (IXTP) S TJ TJM Tstg = = ≤ RDS(on) TO-247 (IXTH) TO-263 (IXTA) G IXTA26P20P IXTH26P20P IXTP26P20P IXTQ26P20P Low gate charge results in simple drive requirement Improved Gate, Avalanche and dynamic dV/dt ruggedness High power density Fast switching DS99913(10/07) IXTA26P20P IXTP26P20P IXTP26P20P IXTQ26P20P Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = -10V, ID = 0.5 • ID25, (Note 1) 10 Ciss Coss 17 S 2920 pF 540 pF 100 pF 18 ns 33 ns 46 ns 21 ns 56 nC 18 nC 20 nC VGS = 0V, VDS = -25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3.3Ω (External) Qg(on) Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.5 °C/W RthJC RthCS (TO-3P)(TO-247) 0.21 °C/W (TO-220) 0.25 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. - 26 A Repetitive - 104 A VSD IF = -13A, VGS = 0V, Note 1 - 3.0 V trr QRM IRM IF = -13A, -di/dt = -100A/μs VR = -100V, VGS = 0V 240 2.20 -18.0 ns μC A Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA26P20P IXTP26P20P IXTP26P20P IXTQ26P20P TO-263 (IXTA) Outline TO-247 (IXTH) Outline ∅P 1 2 3 e Terminals: 1 - Gate Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 TO-3P (IXTQ) Outline TO-220 (IXTP) Outline Pins: 1 - Gate 2 - Drain © 2007 IXYS CORPORATION, All rights reserved 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 IXTA26P20P IXTP26P20P IXTP26P20P IXTQ26P20P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC -28 -90 VGS = -10V -8V -24 VGS = -10V -9V -80 -70 -7V ID - Amperes ID - Amperes -20 -16 -6V -12 -8V -60 -50 -7V -40 -30 -6V -8 -20 -5V -4 0 0 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 0 -3 -6 -9 -12 -15 -18 -21 -24 -27 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ 150ºC Fig. 4. RDS(on) Normalized to ID = -13A vs. Junction Temperature -28 -30 2.8 VGS = -10V -8V -24 VGS = -10V 2.6 2.4 RDS(on) - Normalized -7V ID - Amperes -5V -10 -20 -6V -16 -12 -8 2.2 2.0 I D = -26A 1.8 I D = -13A 1.6 1.4 1.2 1.0 -5V 0.8 -4 0.6 0.4 0 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -50 -10 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = -13A vs. Drain Current 50 75 100 125 150 175 Fig. 6. Maximum Drain Current vs. Case Temperature -28 3.4 3.2 -26 VGS = -10V 3.0 -15V TJ = 175ºC ---- -24 -22 2.8 -20 2.6 ID - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade 2.4 2.2 2.0 1.8 -18 -16 -14 -12 -10 1.6 -8 1.4 -6 TJ = 25ºC 1.2 -4 1.0 -2 0.8 0 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 ID - Amperes IXYS reserves the right to change limits, test conditions, and dimensions. -50 -25 0 25 50 75 100 TJ - Degrees Centigrade 125 150 175 IXTA26P20P IXTP26P20P IXTP26P20P IXTQ26P20P Fig. 7. Input Admittance 32 -40 28 TJ = - 40ºC TJ = - 40ºC 25ºC 150ºC -35 -30 24 25ºC g f s - Siemens ID - Amperes Fig. 8. Transconductance -45 -25 -20 -15 20 16 150ºC 12 8 -10 4 -5 0 0 -3 -3.5 -4 -4.5 -5 -5.5 -6 -6.5 -7 0 -5 -10 -15 -20 VGS - Volts -25 -30 -35 -40 -45 -50 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge -10 -80 VDS = -100V -9 -70 I D = - 13A -8 I G = -1mA -60 -50 VGS - Volts IS - Amperes -7 -40 TJ = 150ºC -30 -5 -4 -3 TJ = 25ºC -20 -6 -2 -10 -1 0 -0.5 0 -1 -1.5 -2 -2.5 -3 -3.5 0 -4 5 10 15 20 25 30 35 40 45 50 55 60 VSD - Volts QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area -100 10,000 RDS(on) Limit f = 1 MHz 100µs Ciss 1,000 ID - Amperes Capacitance - PicoFarads 25µs Coss 1ms - 10 10ms 100 100ms DC Crss TJ = 175ºC TC = 25ºC Single Pulse 10 0 -5 -10 -15 -20 -25 VDS - Volts © 2007 IXYS CORPORATION, All rights reserved -30 -35 -40 -1 - 10 - 100 VDS - Volts - 1000 IXTA26P20P IXTP26P20P IXTP26P20P IXTQ26P20P Fig. 13. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_26P20P(B5)10-10-07