LL101A THUR LL101C SMALL SIGNAL CHOTTKY DIODES SMALL SIGNAL SCHOTTKY DIODES S E M I C O N D U C T O R FEATURES Mini-MELF For general purpose applications The LL101 series is a Metal-on-silicon junction Schottky barrier device which JF is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic level applications These diodes are also available in the DO-35 case with the type designation SD101A to SD101C ,in the SOD-123 case type with the type designation SD101AW to SD101CW and in the SOD-323 case type with the type designation SD101AWS to SD101CWS,in the Micro-MELF case with type designation MCL101 to MCL103 MECHANICAL DATA Dimensions in inches and (millimeters) Case: Mini-MELF glass case(SOD-80 ) Weight: Approx. 0.05 gram ABSOLUTE RATINGS(LIMITING VALUES) Value Symbols VRRM VRRM VRRM Ptot IFSM TJ TSTG LL101A LL101B LL101C Peak Reverse Voltage Power Dissipation (infinite Heat Sink) Maximum Single cycle surge 10ms square wave Junction temperature Storage Temperature Range Units 60 50 40 2.0 V V mW A 125 C 400 1) -55 to+150 C 1) Valid provided that electrodes are kept at ambient temperature ELECTRICAL CHARACTERISTICS (Ratings at 25 C ambient temperature unless otherwise specified) Min. Symbols Reverse breakover voltage at IR=10mA LL101A LL101B LL101C Leakage current at VR=50V VR=40V VR=30V LL101A LL101B LL101C Forward voltage drop at IF=1mA LL101A LL101B LL101C LL101A LL101B LL101C IF=15mA Reverse Recovery time at IF=IR=5mA,recover to 0.1 IR trr Unis V V V 200 200 200 0.41 0.4 0.39 1 0.95 0.9 2.0 2.1 2.2 1 VF VF VF VF VF VF CJ CJ CJ LL101B LL101C Max. 60 50 40 VRRM VRRM VRRM IR IR IR Junction Capacitance at VR=0V ,f=1MHz LL101A Typ. nA nA nA V V V V V V pF pF pF ns 2-37 JINAN JINGHENG CO., LTD. NO.51 HEPING ROAD PR CHINA TEL:86-531-6943657 FAX:86-531-6947096 WWW.JIFUSEMICON.COM Figure 2. Typical forward conduction curve of combination Schottky barrier and PN junction guard ring Figure 1. Typical variation of forward. current vs.fwd. Voltage for primary conduction through the schottky barrier mA mA SMALL SIGNAL CHOTTKY DIODES RATINGS AND CHARACTERISTIC CURVES LL101A THR U LL101C A B A B C C IF IF VF VF Figure 4. Typical capacitance curve as a function of reverse voltage Figure 3.Typical variation of reverse current at versus temperature mA mA B A IR C IR VR VR 2-38 JINAN JINGHENG CO., LTD. NO.51 HEPING ROAD PR CHINA TEL:86-531-6943657 FAX:86-531-6947096 WWW.JIFUSEMICON.COM