R 1N5711, 1N6263 SMALL SIGNAL SCHOTTKY DIODES S E M I C O N D U C T O R FEATURES DO-35 For general purpose applications Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching 1.083(27.5) MIN JF make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications 0.079(2.0) MAX DIA These diodes are also available in the MinMELF case with type designation LL5711 and LL6263. 0.150(3.8) MAX High temperature soldering guaranteed:260℃/10 seconds at terminals Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC MECHANICAL DATA 1.083(27.5) MIN Case: DO-35 glass case 0.020(0.52) MAX DIA Polarity: Color band denotes cathode end Weight: Approx. 0.13 gram Dimensions in inches and (millimeters) ABSOLUTE RATINGS(LIMITING VALUES) Symbols Value VRRM VRRM 70 60 Power Dissipation (infinite Heat Sink) Ptot 400 1) Maximum Single cycle surge 10ms square wave IFSM Junction Temperature TJ TSTG 1N5711 1N6263 Peak Reverse Voltage Storage Temperature Range Units 2.0 V V mW A 150 C -55 to+150 C 1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature ELECTRICAL CHARACTERISTICS (Ratings at 25 C ambient temperature unless otherwise specified) 1N5711 1N6263 Reverse breakover voltage at IR=10mA Symbols Min. VR VR 70 60 Typ. Max. Unis V V Leakage current at VR=50V IR 200 nA Forward voltage drop at IF=1mA IF=15mA VF VF 0.41 1.0 V Junction Capacitance at VR=0V ,f=1MHz CJ 2.0 pF trr RqJA 1 ns 400 K/W Reverse Recovery time at IF=IR=5mA,recover to 0.1 IR Thermal resistance V 2-5 JINAN JINGHENG CO., LTD. NO.51 HEPING ROAD JINAN P.R. CHINA TEL:86-531-86943657 FAX:86-531-86947096 WWW.JIFUSEMICON.COM RATINGS AND CHARACTERISTICS CURVES 1N5711 AND 1N6263 Fig.1 Typical variation of fwd. current vs forward. voltage for primary conduction through the Schottky barrier Fig.2 Typical forward conduction curve of combination Schottky barrier and PN junction guard ring mA mA 10 100 5 80 2 1 60 5 IF IF 2 40 0.1 5 20 2 0 0.01 0.5 0 1V 1V 0.5 0 VF VF Fig.4 Typical capacitance curve as a function of reverse voltage Fig.3 Typical variation of reverse current at various temperatures pF μA 100 2 150 C 5 TJ=25 125 C C 2 10 100 C 5 75 C 2 1 IR 1 50 C CJ 5 2 0.1 25 C 5 2 0.01 0 0 10 20 30 40 0 50V 10 20 30 40 50V VR VR 2-6 JINAN JINGHENG CO., LTD. NO.51 HEPING ROAD JINAN P.R. CHINA TEL:86-531-86943657 FAX:86-531-86947096 WWW.JIFUSEMICON.COM