R LL5711, LL6263 SMALL SIGNAL SCHOTTKY DIODES S E M I C O N D U C T O R FEATURES MiniMELF For general purpose applications Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and 0.063(1.6) 0.055(1.4) coupling diodes for fast switching and low logic level applications These diodes are also available in the DO-35 case with type JF 0.019(0.48) 0.011(0.28) designation 1N5711 and 1N6263. 0.142(3.6) 0.134(3.4) High temperature soldering guaranteed:260℃/10 seconds at terminals Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC MECHANICAL DATA Dimensions in inches and (millimeters) Case: MiniMELF glass case(SOD-80 ) Weight: Approx. 0.05 gram ABSOLUTE RATINGS(LIMITING VALUES) Value Symbols LL5711 LL6263 Peak Reverse Voltage Porwer Dissipation (infinite Heat Sink) Maximum Single cycle surge 10ms square wave Junction temperature Storage Temperature Range VRRM VRRM 70 60 Ptot IFSM TJ TSTG 400 1) Units 2.0 V V mW A 125 C -55 to+150 C 1) Valid provided that electrodes are kept at ambient temperature ELECTRICAL CHARACTERISTICS (Ratings at 25 C ambient temperature unless otherwise specified) Symbols Reverse breakover voltage LL5711 LL6263 Min. VR VR Typ. Max. Unis V V 70 60 IR 200 nA Forward voltage drop at IF=1mA IF=15mA VF VF 0.41 1.0 V V Junction Capacitance at VR=0V ,f=1MHz CJ 2.0 pF trr RqJA 1 ns 300 K/W Leakage current at VR=50V Reverse Recovery time at IF=IR=5mA,recover to 0.1 IR Thermal resistance 2-61 JINAN JINGHENG CO., LTD. NO.51 HEPING ROAD JINAN P.R. CHINA TEL:86-531-86943657 FAX:86-531-86947096 WWW.JIFUSEMICON.COM RATINGS AND CHARACTERISTICS CURVES LL5711 & LL6263 Fig.1 Typical variation of fwd. current vs forward. voltage for primary conduction through the Schottky barrier Fig.2 Typical forward conduction curve of combination Schottky barrier and PN junction guard ring mA mA 10 100 5 80 2 1 60 5 IF IF 2 40 0.1 5 20 2 0 0.01 0.5 0 1V 1V 0.5 0 VF VF Fig.4 Typical capacitance curve as a function of reverse voltage Fig.3 Typical variation of reverse current at various temperatures μA pF 100 2 150 C 5 125 C TJ=25 C 2 10 100 C 5 75 C 2 1 IR 1 50 C CJ 5 2 0.1 25 C 5 2 0.01 0 0 10 20 30 40 0 50V 10 20 30 40 50V VR VR 2-62 JINAN JINGHENG CO., LTD. NO.51 HEPING ROAD JINAN P.R. CHINA TEL:86-531-86943657 FAX:86-531-86947096 WWW.JIFUSEMICON.COM