Product Specification www.jmnic.com 2N6254 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low saturation voltage ・Wide safe operating area ・High dissipation capability APPLICATIONS ・Series and shunt regulators ・High fidelity amplifiers ・Power switching circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 15 A IB Base current 7 A PD Total Power Dissipation 115 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.17 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case JMnic Product Specification www.jmnic.com 2N6254 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 VCEsat-1 Collector-emitter saturation voltage IC=5A ;IB=0.5A 0.5 V VCEsat-2 Collector-emitter saturation voltage IC=15A ;IB=3A 4.0 V VBE Base-emitter on voltage IC=5A ; VCE=2V 1.5 V ICEO Collector cut-off current VCE=60V; IB=0 1.0 mA ICEX Collector cut-off current VCE=100V; VBE=-1.5V TC=150℃ 0.5 5.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.5 mA hFE-1 DC current gain IC=5A ; VCE=2V 20 hFE-2 DC current gain IC=15A ; VCE=4V 5 JMnic 80 UNIT V 70 Product Specification www.jmnic.com 2N6254 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) JMnic