JMNIC 2N6254

Product Specification
www.jmnic.com
2N6254
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・Low saturation voltage
・Wide safe operating area
・High dissipation capability
APPLICATIONS
・Series and shunt regulators
・High fidelity amplifiers
・Power switching circuits
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
100
V
VCEO
Collector-emitter voltage
Open base
80
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
15
A
IB
Base current
7
A
PD
Total Power Dissipation
115
W
Tj
Junction temperature
200
℃
Tstg
Storage temperature
-65~200
℃
VALUE
UNIT
1.17
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
JMnic
Product Specification
www.jmnic.com
2N6254
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A ;IB=0
VCEsat-1
Collector-emitter saturation voltage
IC=5A ;IB=0.5A
0.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=15A ;IB=3A
4.0
V
VBE
Base-emitter on voltage
IC=5A ; VCE=2V
1.5
V
ICEO
Collector cut-off current
VCE=60V; IB=0
1.0
mA
ICEX
Collector cut-off current
VCE=100V; VBE=-1.5V
TC=150℃
0.5
5.0
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
0.5
mA
hFE-1
DC current gain
IC=5A ; VCE=2V
20
hFE-2
DC current gain
IC=15A ; VCE=4V
5
JMnic
80
UNIT
V
70
Product Specification
www.jmnic.com
2N6254
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
JMnic