Product Specification www.jmnic.com 2SA882 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Excellent Safe Operating Area APPLICATIONS ・For power and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -130 V VCEO Collector-emitter voltage Open base -130 V VEBO Emitter-base voltage Open collector -5 V -7 A -100 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.52 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case JMnic Product Specification www.jmnic.com 2SA882 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ;IB=0 VCEsat-1 Collector-emitter saturation voltage IC=-3A; IB=-0.3A -1.0 V VCEsat-2 Collector-emitter saturation voltage IC=-7A ;IB=-1.5A -3.0 V VBE Base-emitter on voltage IC=-3A ; VCE=-4V -1.6 V ICBO Collector cut-off current VCE=-130V; IB=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE-1 DC current gain IC=-1A ; VCE=-4V 40 hFE-2 DC current gain IC=-3A ; VCE=-4V 20 JMnic MIN TYP. MAX -130 UNIT V Product Specification www.jmnic.com 2SA882 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) JMnic