JMnic Product Specification 2N6492 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・High DC current gain ・DARLINGTON APPLICATIONS ・General-purpose power amplifier and low frequency swithing applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 55 V VCEO Collector-emitter voltage Open base 45 V VEBO Emitter-base voltage Open collector 5 V 15 A 100 W IC Collector current PD Total Power Dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.75 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case JMnic Product Specification 2N6492 Silicon NPN Power Transistors CHARACTERISTICS Tm=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.1 A ;IB=0 VCEsat Collector-emitter saturation voltage IC=10A ;IB=100mA 3.0 V VBEsat Base-emitter saturation voltage IC=10A ;IB=100mA 4.0 V VBE Base-emitter on voltage IC=3A ; VCE=4V 2.8 V ICEO Collector cut-off current VCE=40V; IB=0 1.0 mA ICEX Collector cut-off current VCE=55V; VBE(off)=-1.5V 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 3.0 mA hFE-1 DC current gain IC=3A ; VCE=4V 500 hFE-2 DC current gain IC=15A ; VCE=4V 100 2 45 UNIT V JMnic Product Specification 2N6492 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3