JMnic Product Specification Silicon NPN Power Transistors 2N6477 2N6478 DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・High voltage ratings ・Excellent safe operating area APPLICATIONS ・Series and shunt regulators ・High-fidelity amplifiers ・Power switching circuits ・Solenoid drivers PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2N6477 VCBO Collector-base voltage 120 Open base 2N6478 VEBO Emitter-base voltage V 160 2N6477 Collector-emitter voltage UNIT 140 Open emitter 2N6478 VCEO VALUE V 140 Open collector 5 V 2.5 A IC Collector current ICM Collector current-peak 4 A IB Base current 1 A PT Total power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 2.5 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case JMnic Product Specification Silicon NPN Power Transistors 2N6477 2N6478 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6477 VCEO(SUS) Collector-emitter sustaining voltage MIN TYP. MAX UNIT 120 IC=0.1A ;IB=0 2N6478 V 140 VCEsat-1 Collector-emitter saturation voltage IC=1.0A;IB=0.1A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=2.5A;IB=0.5A 2.0 V VBE-1 Base-emitter on voltage IC=1.0A ; VCE=4V 1.8 V VBE-2 Base-emitter on voltage IC=2.5A ; VCE=4V 3.0 V 2N6477 VCE=130V VCE=120V; TC=150℃ 2.0 10 2N6478 VCE=150V VCE=140V; TC=150℃ 2.0 10 2N6477 VCE=80V;IB=0 ICEX ICEO Collector cut-off current VBE=-1.5V mA Collector cut-off current 2N6478 2.0 mA 2.0 mA VCE=100V;IB=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=1.0A ; VCE=4V 25 hFE-2 DC current gain IC=2.5A ; VCE=4V 5 COB Output capacitance IE=0 ; VCB=10V;f=1MHz fT Transition frequency IC=0.5A ; VCE=4V 2 150 250 0.2 pF MHz JMnic Product Specification Silicon NPN Power Transistors 2N6477 2N6478 PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3