JMNIC 2N6477

JMnic
Product Specification
Silicon NPN Power Transistors
2N6477 2N6478
DESCRIPTION
・With TO-220 package
・Low collector saturation voltage
・High voltage ratings
・Excellent safe operating area
APPLICATIONS
・Series and shunt regulators
・High-fidelity amplifiers
・Power switching circuits
・Solenoid drivers
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
2N6477
VCBO
Collector-base voltage
120
Open base
2N6478
VEBO
Emitter-base voltage
V
160
2N6477
Collector-emitter voltage
UNIT
140
Open emitter
2N6478
VCEO
VALUE
V
140
Open collector
5
V
2.5
A
IC
Collector current
ICM
Collector current-peak
4
A
IB
Base current
1
A
PT
Total power dissipation
50
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
MAX
UNIT
2.5
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance from junction to case
JMnic
Product Specification
Silicon NPN Power Transistors
2N6477 2N6478
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N6477
VCEO(SUS)
Collector-emitter
sustaining voltage
MIN
TYP.
MAX
UNIT
120
IC=0.1A ;IB=0
2N6478
V
140
VCEsat-1
Collector-emitter saturation voltage
IC=1.0A;IB=0.1A
1.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=2.5A;IB=0.5A
2.0
V
VBE-1
Base-emitter on voltage
IC=1.0A ; VCE=4V
1.8
V
VBE-2
Base-emitter on voltage
IC=2.5A ; VCE=4V
3.0
V
2N6477
VCE=130V
VCE=120V; TC=150℃
2.0
10
2N6478
VCE=150V
VCE=140V; TC=150℃
2.0
10
2N6477
VCE=80V;IB=0
ICEX
ICEO
Collector cut-off current
VBE=-1.5V
mA
Collector cut-off current
2N6478
2.0
mA
2.0
mA
VCE=100V;IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1.0A ; VCE=4V
25
hFE-2
DC current gain
IC=2.5A ; VCE=4V
5
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Transition frequency
IC=0.5A ; VCE=4V
2
150
250
0.2
pF
MHz
JMnic
Product Specification
Silicon NPN Power Transistors
2N6477 2N6478
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3