JMnic Product Specification 2SA1111 2SA1112 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC2591/2592 ・Good linearity of hFE ・High VCEO APPLICATIONS ・For audio frequency, high power amplifiers application PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SA1111 VCBO Collector-base voltage -150 Open base 2SA1112 VEBO Emitter-base voltage V -180 2SA1111 Collector-emitter voltage UNIT -150 Open emitter 2SA1112 VCEO VALUE V -180 Open collector -5 V -1 A -1.5 A 20 W IC Collector current ICM Collector current-peak PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SA1111 2SA1112 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SA1111 V(BR)CEO Collector-emitter breakdown voltage TYP. MAX UNIT -150 IC=-0.1mA ,IB=0 2SA1112 V(BR)EBO MIN V -180 Emitter-base breakdown voltage IE=-10μA ,IC=0 VCEsat Collector-emitter saturation voltage IC=-0.5A; IB=-50mA -0.5 -2.0 V VBEsat Base-emitter saturation voltage IC=-0.5A; IB=-50mA -1.0 -2.0 V ICBO Collector cut-off current VCB=-120V; IE=0 -1 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -1 μA hFE-1 DC current gain IC=-150mA ; VCE=-10V 65 hFE-2 DC current gain IC=-500mA ; VCE=-5V 50 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 30 pF fT Transition frequency IC=50mA ; VCE=-10V 200 MHz hFE-1 Classifications P Q R S 65-110 90-155 130-220 185-330 2 -5 V 330 JMnic Product Specification 2SA1111 2SA1112 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 JMnic Product Specification 2SA1111 2SA1112 Silicon PNP Power Transistors 4