JMNIC 2SC2275

JMnic
Product Specification
2SC2275 2SC2275A
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220 package
・Complement to type 2SA985/985A
・High breakdown voltage
APPLICATIONS
・For low frequency and high frequency
power amplifer applicatons
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
2SC2275
VCBO
Collector-base voltage
120
Open base
2SC2275A
VEBO
Emitter-base voltage
V
150
2SC2275
Collector-emitter voltage
UNIT
120
Open emitter
2SC2275A
VCEO
VALUE
V
150
Open collector
5
V
IC
Collector current
1.5
A
ICM
Collector current-peak
3.0
A
IB
Base current
0.3
A
PC
Collector power dissipation
25
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SC2275 2SC2275A
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2SC2275
V(BR)CEO
Collector-emitter
breakdown voltage
TYP.
MAX
UNIT
120
IC=25mA ,IB=0
2SC2275A
‹
MIN
V
150
VCEsat
Collector-emitter saturation voltage
IC=1A; IB=0.1A
2.0
V
VBEsat
Base-emitter saturation voltage
IC=1A; IB=0.1A
1.5
V
ICBO
Collector cut-off current
VCB=120V; IE=0
1.0
μA
IEBO
Emitter cut-off current
VEB=3V; IC=0
1.0
μA
hFE-1
DC current gain
IC=5mA ; VCE=5V
35
hFE-2
DC current gain
IC=0.3A ; VCE=5V
60
COB
Output capacitance
IE=0 ; VCB=10V,f=1MHz
19
pF
fT
Transition frequency
IC=0.2A ; VCE=5V
200
MHz
hFE-2 Classifications
R
Q
P
60-120
100-200
160-320
2
150
320
JMnic
Product Specification
2SC2275 2SC2275A
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3