JMnic Product Specification 2SA985 2SA985A Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC2275/2275A ・High breakdown voltage APPLICATIONS ・For low frequency and high frequency power amplifer applicatons PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SA985 VCBO Collector-base voltage -120 Open base 2SA985A VEBO Emitter-base voltage V -150 2SA985 Collector-emitter voltage UNIT -120 Open emitter 2SA985A VCEO VALUE V -150 Open collector -5 V IC Collector current -1.5 A ICM Collector current-peak -3.0 A IB Base current -0.3 A PT Total power dissipation Ta=25℃ 1.5 TC=25℃ 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SA985 2SA985A Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SA985 V(BR)CEO Collector-emitter breakdown voltage TYP. MAX UNIT -120 IC=-25mA ,IB=0 2SA985A MIN V -150 VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.1A -0.3 -2.0 V VBEsat Base-emitter saturation voltage IC=-1A; IB=-0.1A -0.9 -1.5 V ICBO Collector cut-off current VCB=-120V; IE=0 -1.0 μA IEBO Emitter cut-off current VEB=-3V; IC=0 -1.0 μA hFE-1 DC current gain IC=-5mA ; VCE=-5V 35 hFE-2 DC current gain IC=-0.3A ; VCE=-5V 60 COB Output capacitance IE=0 ; VCB=-10V,f=1MHz 29 pF fT Transition frequency IC=-0.2A ; VCE=-5V 180 MHz hFE-2 Classifications R Q P 60-120 100-200 160-320 2 150 320 JMnic Product Specification 2SA985 2SA985A Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3