JMnic Product Specification 2SA1186 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・High current capability ・Complement to type 2SC2837 APPLICATIONS ・Audio and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -10 A IB Base current -2 A PC Collector power dissipation 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SA1186 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A -2.0 V ICBO Collector cut-off current VCB=-150V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE DC current gain IC=-3A ; VCE=-4V Cob Output capacitance IE=0 ; VCB=-80V;f=1MHz 110 pF fT Transition frequency IE=1A ; VCE=-12V 60 MHz 0.25 μs 0.80 μs 0.20 μs -150 UNIT V 50 Switching times ton Turn-on time ts Storage time tf Fall time IC=-5A;RL=12Ω IB1=-IB2=-0.5A VCC=-60V hFE Classifications O P Y 50-100 70-140 90-180 2 JMnic Product Specification 2SA1186 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 Inchange Semiconductor Product Specification 2SA1186 Silicon PNP Power Transistors 4