JMnic Product Specification 2SA1493 Silicon PNP Power Transistors ・ DESCRIPTION ・With MT-200 package ・Complement to type 2SC3857 APPLICATIONS ・Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (MT-200) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -200 V VCEO Collector-emitter voltage Open base -200 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -15 A IB Base current -5 A PC Collectorl power dissipation 150 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SA1493 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 VCEsat Collector-emitter saturation voltage IC=-10 A;IB=-1 A -3.0 V ICBO Collector cut-off current VCB=-200V; IE=0 -100 μA IEBO Emitter cut-off current VEB=-6V; IC=0 -100 μA hFE DC current gain IC=-5A ; VCE=-4V fT Transition frequency IC=-0.5A ; VCE=-12V 20 MHz COB Output capacitance IE=0; VCB=-10V;f=1MHz 400 pF 0.30 μs 0.90 μs 0.20 μs -200 UNIT V 50 180 Switching times ton Turn-on time ts Storage time tf Fall time IC=-5A;RL=-12Ω IB1=-IB2=-0.5A VCC=-60V hFE classifications O P Y 50-100 70-140 90-180 2 JMnic Product Specification 2SA1493 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 JMnic Product Specification 2SA1493 Silicon PNP Power Transistors 4