Inchange Semiconductor Product Specification 2SC4466 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SA1693 APPLICATIONS ・Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol VALUE R O T UC UNIT 120 V 80 V 6 V Collector current 6 A IB Base current 3 A PC Collector power dissipation 60 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Absolute maximum ratings(Ta=℃) 体 导 半 SYMBOL VCBO VCEO VEBO IC PARAMETER 固电 D N O IC CONDITIONS EM S E NG Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector A H C IN TC=25℃ Inchange Semiconductor Product Specification 2SC4466 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A 1.5 V ICBO Collector cut-off current VCB=120V; IE=0 10 μA IEBO Emitter cut-off current VEB=6V; IC=0 10 μA hFE DC current gain IC=2A ; VCE=4V COB Output capacitance IE=0 ; VCB=10V,f=1MHz 110 pF fT Transition frequency IC=-0.5A ; VCE=12V 20 MHz 0.16 μs 2.60 μs 0.34 μs 80 UNIT V 50 180 Switching times ton Turn-on time ts Storage time tf 体 导 半 固电 Fall time 50-100 EM S E NG A H C IN hFE Classifications O IC=3A;RL=10Ω IB1=- IB2=0.3A VCC=30V P Y 70-140 90-180 2 D N O IC R O T UC Inchange Semiconductor Product Specification 2SC4466 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN D N O IC Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 R O T UC Inchange Semiconductor Product Specification 2SC4466 Silicon NPN Power Transistors 体 导 半 固电 EM S E NG A H C IN 4 D N O IC R O T UC