JMnic Product Specification 2SA1386 2SA1386A Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SC3519/3519A APPLICATIONS ・Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS 2SA1386 VCBO Collector-base voltage -160 Open base 2SA1386A VEBO Emitter-base voltage V -180 2SA1386 Collector-emitter voltage UNIT -160 Open emitter 2SA1386A VCEO VALUE V -180 Open collector -5 V IC Collector current -15 A IB Base current -4 A PC Collector power dissipation 130 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SA1386 2SA1386A Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO PARAMETER Collector-emitter breakdown voltage CONDITIONS 2SA1386 ICBO MAX IC=-25mA ;IB=0 Collector-emitter saturation voltage 2SA1386 Collector cut-off Current TYP. 2SA1386A UNIT -160 2SA1386A VCEsat MIN V -180 IC=-5A; IB=-0.5A -2.0 V -100 μA -100 μA VCB=-160V; IE=0 VCB=-180V; IE=0 IEBO Emitter cut-off current VEB=-5V; IC=0 hFE DC current gain IC=-5A ; VCE=-4V Cob Output capacitance IE=0 ; VCB=10V;f=1MHz 500 pF fT Transition frequency IC=-2A ; VCE=-12V 40 MHz 0.30 μs 0.70 μs 0.20 μs 50 180 Switching times ton Turn-on time ts Storage time tf Fall time IC=-5A;RL=4Ω IB1=-IB2=-1A VCC=40V hFE Classifications O P Y 50-100 70-140 90-180 2 JMnic Product Specification 2SA1386 2SA1386A Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 JMnic Product Specification 2SA1386 2SA1386A Silicon PNP Power Transistors 导体 半 电 固 INC R O T UC D N O EMIC S E G HAN 4