JMNIC 2SA1386

JMnic
Product Specification
2SA1386 2SA1386A
Silicon PNP Power Transistors
DESCRIPTION
・With TO-3PN package
・Complement to type 2SC3519/3519A
APPLICATIONS
・Audio and general purpose
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
2SA1386
VCBO
Collector-base voltage
-160
Open base
2SA1386A
VEBO
Emitter-base voltage
V
-180
2SA1386
Collector-emitter voltage
UNIT
-160
Open emitter
2SA1386A
VCEO
VALUE
V
-180
Open collector
-5
V
IC
Collector current
-15
A
IB
Base current
-4
A
PC
Collector power dissipation
130
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SA1386 2SA1386A
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
PARAMETER
Collector-emitter
breakdown voltage
CONDITIONS
2SA1386
ICBO
MAX
IC=-25mA ;IB=0
Collector-emitter saturation voltage
2SA1386
Collector cut-off
Current
TYP.
2SA1386A
UNIT
-160
2SA1386A
VCEsat
MIN
V
-180
IC=-5A; IB=-0.5A
-2.0
V
-100
μA
-100
μA
VCB=-160V; IE=0
VCB=-180V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE
DC current gain
IC=-5A ; VCE=-4V
Cob
Output capacitance
IE=0 ; VCB=10V;f=1MHz
500
pF
fT
Transition frequency
IC=-2A ; VCE=-12V
40
MHz
0.30
μs
0.70
μs
0.20
μs
50
180
Switching times
‹
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-5A;RL=4Ω
IB1=-IB2=-1A
VCC=40V
hFE Classifications
O
P
Y
50-100
70-140
90-180
2
JMnic
Product Specification
2SA1386 2SA1386A
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
JMnic
Product Specification
2SA1386 2SA1386A
Silicon PNP Power Transistors
导体
半
电
固
INC
R
O
T
UC
D
N
O
EMIC
S
E
G
HAN
4