JMnic Product Specification 2SA1262 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC3179 APPLICATIONS ・Audio and general purpose PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -4 A IB Base current -1 A PC Collector power dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SA1262 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ,IB=0 VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A -0.6 V ICBO Collector cut-off current VCB=-60V; IE=0 -100 μA IEBO Emitter cut-off current VEB=-6V; IC=0 -100 μA hFE DC current gain IC=-1A ; VCE=-4V fT Transition frequency IE=0.2A ; VCE=-12V 15 MHz Cob Output capacitance IE=0 ; VCB=-10V ;f=1MHz 90 pF 0.25 μs 0.75 μs 0.25 μs -60 UNIT V 40 Switching times ton Turn-on time ts Storage time tf Fall time IC=-2A ;IB1=- IB2=-0.2A RL=10Ω;VCC=-20V 2 JMnic Product Specification 2SA1262 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 JMnic Product Specification 2SA1262 Silicon PNP Power Transistors 4