JMNIC 2SA1217

JMnic
Product Specification
2SA1217
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-126 package
・Complement to type 2SC2877
・Good linearity of hFE
APPLICATIONS
・Audio frequency power amplifier
・Low speed switching
・Suitable for output stage of 5 watts
car radio and car stereo
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-40
V
VCEO
Collector-emitter voltage
Open base
-40
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-3
A
IB
Base current
-1
A
PD
Total power dissipation
10
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SA1217
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=-2.0A; IB=-0.2A
-0.8
V
VBE
Base-emitter on voltage
IC=-0.5A ; VCE=-2V
-1.0
V
ICBO
Collector cut-off current
VCB=-40V; IE=0
-0.1
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-0.1
μA
hFE-1
DC current gain
IC=-0.5A ; VCE=-2V
80
hFE-2
DC current gain
IC=-2.5A ; VCE=-2V
25
Transition frequency
IC=-0.5A ; VCE=-2V
100
MHz
Collector output capacitance
f=1MHz ; VCB=-10V;IE=0
35
pF
fT
COB
‹
CONDITIONS
hFE-1 Classifications
O
Y
80-160
120-240
2
MIN
TYP.
MAX
-40
UNIT
V
240
JMnic
Product Specification
2SA1217
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
JMnic
Product Specification
2SA1217
Silicon PNP Power Transistors
4