JMnic Product Specification 2SA1217 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SC2877 ・Good linearity of hFE APPLICATIONS ・Audio frequency power amplifier ・Low speed switching ・Suitable for output stage of 5 watts car radio and car stereo PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -40 V VCEO Collector-emitter voltage Open base -40 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -3 A IB Base current -1 A PD Total power dissipation 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SA1217 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-2.0A; IB=-0.2A -0.8 V VBE Base-emitter on voltage IC=-0.5A ; VCE=-2V -1.0 V ICBO Collector cut-off current VCB=-40V; IE=0 -0.1 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 μA hFE-1 DC current gain IC=-0.5A ; VCE=-2V 80 hFE-2 DC current gain IC=-2.5A ; VCE=-2V 25 Transition frequency IC=-0.5A ; VCE=-2V 100 MHz Collector output capacitance f=1MHz ; VCB=-10V;IE=0 35 pF fT COB CONDITIONS hFE-1 Classifications O Y 80-160 120-240 2 MIN TYP. MAX -40 UNIT V 240 JMnic Product Specification 2SA1217 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 JMnic Product Specification 2SA1217 Silicon PNP Power Transistors 4