Inchange Semiconductor Product Specification 2SA1359 Silicon PNP Power Transistors · DESCRIPTION ·With TO-126 package ·Complement to type 2SC3422 ·Good linearity of hFE APPLICATIONS ·Audio frequency amplifier ·Low speed switching ·Suitable for output stage of 5W car radio and car stereo PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -40 V VCEO Collector-emitter voltage Open base -40 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -3 A IB Base current -1 A PD Total power dissipation Ta=25℃ 1.5 TC=25℃ 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55～+150 ℃ Inchange Semiconductor Product Specification 2SA1359 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A -0.8 V VBE Base-emitter on voltage IC=-0.5A ; VCE=-2V -1.0 V ICBO Collector cut-off current VCB=-40V; IE=0 -0.1 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 μA hFE-1 DC current gain IC=-0.5A ; VCE=-2V 80 hFE-2 DC current gain IC=-2.5A ; VCE=-2V 25 Cob Output capacitance IE=0 ; VCB=-10V f=1MHz 35 pF fT Transition frequency IC=-0.5A ; VCE=-2V 100 MHz CONDITIONS hFE-1 Classifications O Y 80-160 120-240 2 MIN TYP. MAX -40 UNIT V 240 Inchange Semiconductor Product Specification 2SA1359 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SA1359 Silicon PNP Power Transistors 4