JMnic Product Specification 2SB1009 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD1380 APPLICATIONS ・For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -40 V VCEO Collector-emitter voltage Open base -32 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -2 A PD Total power dissipation Ta=25℃ 0.1 W TC=25℃ 10 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SB1009 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-2.0A; IB=-0.2A -0.8 V VBEsat Base-emitter saturation voltage IC=-2.0A ;IB=-0.2A -2.0 V ICBO Collector cut-off current VCB=-20V; IE=0 -1 μA IEBO Emitter cut-off current VEB=-3V; IC=0 -1 μA hFE-1 DC current gain IC=-20mA ; VCE=-5V 40 hFE-2 DC current gain IC=-500mA ; VCE=-5V 82 Transition frequency IC=-500mA ; VCE=-5V 100 MHz Collector output capacitance f=1MHz ; VCB=-10V 50 pF fT COB CONDITIONS 2 MIN TYP. MAX -32 UNIT V 390 JMnic Product Specification 2SB1009 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3