JMnic Product Specification 2SA1327 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・High current capacity APPLICATIONS ・Strobe flash applications ・Audio power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT V VCBO Collector-base voltage Open emitter -50 VCEO Collector-emitter voltage Open base -20 VEBO Emitter-base voltage Open collector -8 V V IC Collector current -10 A ICM Collector current-peak -20 A IB Base current -2 A PC Collector power dissipation TC=25℃ 20 W Ta=25℃ 2 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SA1327 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA , IB=0 VCEsat Collector-emitter saturation voltage IC=-8A; IB=-0.4A -0.5 V VBE Base-emitter on voltage IC=-8A ; VCE=-2V -1.5 V ICBO Collector cut-off current VCB=-50V;IE=0 -1.0 μA IEBO Emitter cut-off current VEB=-8V; IC=0 -1.0 μA hFE-1 DC current gain IC=-1A ; VCE=-2V 100 hFE -2 DC current gain IC=-8A ; VCE=-2V 70 COB Output capacitance IE=0 ; VCB=-10V; f=1MHz 400 pF fT Transition frequency IC=-1A ; VCE=-2V 45 MHz CONDITIONS hFE-1 Classifications O Y 100-200 160-320 2 MIN TYP. MAX -20 UNIT V 320 JMnic Product Specification 2SA1327 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 JMnic Product Specification 2SA1327 Silicon PNP Power Transistors 4