JMNIC 2SB966

JMnic
Product Specification
2SB966
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-3PFa package
・Complement to type 2SD1289
APPLICATIONS
・For use in low frequency and
power amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-120
V
VCEO
Collector-emitter voltage
Open base
-120
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-8
A
ICM
Collector current-peak
-12
A
PC
Collector power dissipation
80
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SB966
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=-25mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=-5A ;IB=-0.5A
-1.5
V
VBEsat
Base-emitter saturation voltage
IC=-5A ;IB=-0.5A
-2.0
V
ICBO
Collector cut-off current
VCB=-120V; IE=0
-50
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-50
μA
hFE -1
DC current gain
IC=-1A ; VCE=-5V
60
hFE -2
DC current gain
IC=-5A ; VCE=-5V
20
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
200
pF
fT
Transition frequency
IC=-1A ; VCE=-5V
65
MHz
2
MIN
TYP.
MAX
-120
UNIT
V
320
JMnic
Product Specification
2SB966
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3