JMnic Product Specification 2SB966 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1289 APPLICATIONS ・For use in low frequency and power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector-emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -8 A ICM Collector current-peak -12 A PC Collector power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SB966 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A -1.5 V VBEsat Base-emitter saturation voltage IC=-5A ;IB=-0.5A -2.0 V ICBO Collector cut-off current VCB=-120V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -50 μA hFE -1 DC current gain IC=-1A ; VCE=-5V 60 hFE -2 DC current gain IC=-5A ; VCE=-5V 20 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 200 pF fT Transition frequency IC=-1A ; VCE=-5V 65 MHz 2 MIN TYP. MAX -120 UNIT V 320 JMnic Product Specification 2SB966 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3