JMnic Product Specification 2SA1332 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・High VCEO APPLICATIONS ・Power amplifier applications ・Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -160 V VCEO Collector-emitter voltage Open base -160 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -1.5 A IB Base current -0.15 A PC Collector power dissipation 20 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SA1332 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0 -160 V V(BR)EBO Emitter-base breakdown voltage IE=1mA , IC=0 -5 V Collector-emitter saturation voltage IC=-0.5A, IB=-50mA -1.5 V VBE Base-emitter voltage IC=-0.1A ; VCE=-10V -1.0 V ICBO Collector cut-off current VCB=-160V, IE=0 -1.0 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -1.0 μA hFE DC current gain IC=-0.1A ; VCE=-10V Transition frequency IC=-0.1A ; VCE=-10V VCEsat fT 2 60 240 200 MHz JMnic Product Specification 2SA1332 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3