TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/537 Devices 2N6674 Qualified Level 2N6675 2N6689 JAN JANTX JANTXV 2N6690 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current VCEO VCBO VCEX VEBO IB IC @ TA = +250C @ TC = +250C(1) Operating & Storage Temperature Range Total Power Dissipation PT Top; Tstg 2N6674 2N6675 2N6689 2N6690 300 400 450 650 450 650 7.0 5.0 15 2N6674 2N6689 2N6675 2N6690 6.0(2) 3.0(3) 175 175 -65 to +200 Unit Vdc Vdc Vdc Vdc Adc Adc 2N6674, 2N6675 TO-3 (TO-204AA)* W W 0 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 1.0 W/0C for TC > 250C 2) Derate linearly 34.2 mW/0C for TA > 250C 3) Derate linearly 17.1 mW/0C for TA > 250C Symbol RθJC Max. 1.0 Unit C/W 0 2N6689, 2N6690 TO-61* * See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. 2N6674, 2N6689 2N6675, 2N6690 V(BR)CEO 300 400 2N6674, 2N6689 2N6675, 2N6690 ICEX Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc Collector-Emitter Cutoff Current VCE = 450 Vdc, VBE = -1.5 Vdc VCE = 650 Vdc, VBE = -1.5 Vdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Vdc 0.1 0.1 mAdc 120101 Page 1 of 2 2N6674, 2N6675, 2N6689, 2N6690 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Emitter-Base Cutoff Current VEB = 7.0 Vdc Collector-Base Cutoff Current VCB = 450 Vdc VCB = 650 Vdc Symbol 2N6674, 2N6689 2N6675, 2N6690 Min. Max. IEBO 2.0 ICBO 1.0 1.0 Unit mAdc mAdc ON CHARACTERISTICS (4) Forward-Current Transfer Ratio IC = 1 Adc; VCE = 3.0 Vdc IC = 10 Adc; VCE = 2.0 Vdc Collector-Emitter Saturation Voltage IC = 10 Adc; IB = 2 Adc IC = 15 Adc; IB = 5 Adc Base-Emitter Saturation Voltage IC = 10 Adc; IB = 2 Adc hFE 15 8 40 20 VCE(sat) 1.0 5.0 Vdc VBE(sat) 1.5 Vdc DYNAMIC CHARACTERISTICS Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 1.0 Adc, VCE = 10 Vdc, f = 5 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz hfe 3.0 10 Cobo 150 500 pF 0.1 0.6 2.5 0.5 0.5 µs µs µs µs µs SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time Cross-Over Time t d r t s t f t c t See Figure 3 of MIL-PRF-19500/537 SAFE OPERATING AREA DC Tests (continuous dc) TC = +250C, power application time = 1.0 s; 1 Cycle, (See Figure 4 of MIL-PRF-19500/537) Test 1 VCE = 11.7 Vdc, IC = 15 Adc All Types Test 2 VCE = 30 Vdc, IC = 5.9 Adc 2N6674, 2N6675 Test 3 VCE = 100 Vdc, IC = 0.25 Adc All Types Test 4 VCE = 25 Vdc, IC = 7.0 Adc 2N6689, 2N6690 Test 5 VCE = 300 Vdc, IC = 20 mAdc 2N6674, 2N6689 VCE = 400 Vdc, IC = 10 mAdc 2N6675, 2N6690 Clamped Switching TA = 250C; VCC = 15 Vdc; Load condition B; RBB1 = 5 Ω; RBB2 = 1.5 Ω; VBB2 = 5 Vdc; L = 50 µH; R of inductor = .05Ω; RL = R of inductor. (See Figure 6 of MIL-PRF-19500/537) Clamp Voltage = 350; IC = 10 Adc 2N6674, 2N6689 Clamp Voltage = 450; IC = 10 Adc 2N6675, 2N6690 (4) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 2 of 2