JMNIC 2SC3298B

Product Specification
www.jmnic.com
2SC3298 2SC3298A 2SC3298B
Silicon Power Transistors
・
DESCRIPTION
・With TO-220Fa package
・Complement to type
2SA1306,2SA1306A,2SA1306B
APPLICATIONS
・Power amplifier applications
・Driver stage amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
ABSOLUTE MAXIMUM RATINGS AT Tc=25℃
SYMBOL
PARAMETER
CONDITIONS
2SC3298
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
2SC3298A
Open emitter
Emitter-base voltage
180
2SC3298B
200
2SC3298
160
2SC3298A
UNIT
160
Open base
2SC3298B
VEBO
VALUE
180
V
V
200
Open collector
5
V
IC
Collector current
1.5
A
IB
Base current
0.15
A
PC
Collector power dissipation
20
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
www.jmnic.com
Silicon Power Transistors
2SC3298 2SC3298A 2SC3298B
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2SC3298
VCEO
Collector-emitter
breakdown voltage
2SC3298A
TYP.
MAX
UNIT
160
IC=10mA , IB=0
V
180
200
2SC3298B
VCEsat
MIN
Collector-emitter saturation voltage
IC=0.5A, IB=50mA
1.5
V
VBE
Emitter-base voltage
IC=0.5A ,VCE=5V
1.0
V
ICBO
Collector cut-off current
VCB=160V, IE=0
1.0
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1.0
μA
hFE
DC current gain
IC=0.1A ; VCE=5V
Cob
Output capacitance
IE=0 ; VCB=10V,f=1MHz
25
pF
fT
Transition frequency
IC=0.1A ; VCE=10V
100
MHz
hFE-2 Classifications
O
Y
70-140
120-240
JMnic
70
240
Product Specification
Silicon Power Transistors
www.jmnic.com
2SC3298 2SC3298A 2SC3298B
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
JMnic