JMNIC 2SB649

JMnic
Product Specification
2SB649 2SB649A
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-126 package
・Complement to type 2SD669/669A
・High breakdown voltage VCEO:-120/-160V
・High current -1.5A
・Low saturation voltage,excellent hFE linearity
APPLICATIONS
・For low-frequency power
amplifier applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
2SB649
VCBO
Collector-base voltage
-120
Open base
2SB649A
VEBO
Emitter-base voltage
IC
V
-180
2SB649
Collector-emitter voltage
UNIT
-180
Open emitter
2SB649A
VCEO
VALUE
V
-160
Open collector
-5
V
Collector current (DC)
-1.5
A
ICM
Collector current-Peak
-3
A
PD
Total power dissipation
Ta=25℃
1
TC=25℃
20
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
JMnic
Product Specification
2SB649 2SB649A
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
PARAMETER
CONDITIONS
2SB649
Collector-emitter
breakdown voltage
MIN
TYP.
MAX
-120
IC=-10mA; RBE=∞
2SB649A
V
-160
2SB649
Collector-base
breakdown voltage
UNIT
-180
IC=-1m A ;IE=0
V
-180
2SB649A
Emitter-base breakdown voltage
IE=-1mA ;IC=0
Collector-emitter saturation voltage
IC=-0.5A ;IB=-50mA
-1.0
V
VBE
Base-emitter voltage
IC=-150mA ; VCE=5V
-1.5
V
ICBO
Collector cut-off current
VCB=-160V; IE=0
-10
μA
hFE-1
DC current gain
VCEsat
2SB649
fT
COB
‹
60
320
60
200
DC current gain
IC=-0.5A ; VCE=-5V
Transition frequency
IC=-150mA ; VCE=-5V
140
MHz
Collector output capacitance
f=1MHz ; VCB=-10V
27
pF
hFE Classifications
B
C
D
2SB649
60-120
100-200
160-320
2SB649A
60-120
100-200
hFE-1
V
IC=-150mA ; VCE=-5V
2SB649A
hFE-2
-5
2
30
JMnic
Product Specification
2SB649 2SB649A
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
JMnic
Product Specification
2SB649 2SB649A
Silicon PNP Power Transistors
4