JMnic Product Specification 2SB649 2SB649A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD669/669A ・High breakdown voltage VCEO:-120/-160V ・High current -1.5A ・Low saturation voltage,excellent hFE linearity APPLICATIONS ・For low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SB649 VCBO Collector-base voltage -120 Open base 2SB649A VEBO Emitter-base voltage IC V -180 2SB649 Collector-emitter voltage UNIT -180 Open emitter 2SB649A VCEO VALUE V -160 Open collector -5 V Collector current (DC) -1.5 A ICM Collector current-Peak -3 A PD Total power dissipation Ta=25℃ 1 TC=25℃ 20 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SB649 2SB649A Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO PARAMETER CONDITIONS 2SB649 Collector-emitter breakdown voltage MIN TYP. MAX -120 IC=-10mA; RBE=∞ 2SB649A V -160 2SB649 Collector-base breakdown voltage UNIT -180 IC=-1m A ;IE=0 V -180 2SB649A Emitter-base breakdown voltage IE=-1mA ;IC=0 Collector-emitter saturation voltage IC=-0.5A ;IB=-50mA -1.0 V VBE Base-emitter voltage IC=-150mA ; VCE=5V -1.5 V ICBO Collector cut-off current VCB=-160V; IE=0 -10 μA hFE-1 DC current gain VCEsat 2SB649 fT COB 60 320 60 200 DC current gain IC=-0.5A ; VCE=-5V Transition frequency IC=-150mA ; VCE=-5V 140 MHz Collector output capacitance f=1MHz ; VCB=-10V 27 pF hFE Classifications B C D 2SB649 60-120 100-200 160-320 2SB649A 60-120 100-200 hFE-1 V IC=-150mA ; VCE=-5V 2SB649A hFE-2 -5 2 30 JMnic Product Specification 2SB649 2SB649A Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 JMnic Product Specification 2SB649 2SB649A Silicon PNP Power Transistors 4