JMnic Product Specification 2SB859 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD1135 APPLICATIONS ・Low frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -4 A ICP Collector current-Peak -8 A PC Collector power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -45~150 ℃ TC=25℃ JMnic Product Specification 2SB859 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; RBE=∞ -80 V V(BR)EBO Emitter-base breakdown votage IE=-10μA; IC=0 -5 V Collector-emitter saturation voltage IC=-2 A;IB=-0.2 A -2.0 V VBE Base-emitter voltage IC=-1A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-80V; IE=0 -0.1 mA hFE-1 DC current gain IC=-1A ; VCE=-5V 60 hFE-2 DC current gain IC=-0.1A ; VCE=-5V 35 Cob Collector output capacitance IC=0; VCB=-20V;f=1MHz 75 pF Transition frequency IC=-0.5A ; VCE=-5V 20 MHz VCEsat fT CONDITIONS hFE-1 classifications B C 60-120 100-200 2 MIN TYP. MAX UNIT 200 JMnic Product Specification 2SB859 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 JMnic Product Specification 2SB859 Silicon PNP Power Transistors 4