JMNIC 2SB859

JMnic
Product Specification
2SB859
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-220C package
・Complement to type 2SD1135
APPLICATIONS
・Low frequency power amplifier
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-100
V
VCEO
Collector-emitter voltage
Open base
-80
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-4
A
ICP
Collector current-Peak
-8
A
PC
Collector power dissipation
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-45~150
℃
TC=25℃
JMnic
Product Specification
2SB859
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA; RBE=∞
-80
V
V(BR)EBO
Emitter-base breakdown votage
IE=-10μA; IC=0
-5
V
Collector-emitter saturation voltage
IC=-2 A;IB=-0.2 A
-2.0
V
VBE
Base-emitter voltage
IC=-1A ; VCE=-5V
-1.5
V
ICBO
Collector cut-off current
VCB=-80V; IE=0
-0.1
mA
hFE-1
DC current gain
IC=-1A ; VCE=-5V
60
hFE-2
DC current gain
IC=-0.1A ; VCE=-5V
35
Cob
Collector output capacitance
IC=0; VCB=-20V;f=1MHz
75
pF
Transition frequency
IC=-0.5A ; VCE=-5V
20
MHz
VCEsat
fT
‹
CONDITIONS
hFE-1 classifications
B
C
60-120
100-200
2
MIN
TYP.
MAX
UNIT
200
JMnic
Product Specification
2SB859
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
JMnic
Product Specification
2SB859
Silicon PNP Power Transistors
4