JMNIC 2SB1086

JMnic
Product Specification
2SB1086
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-126 package
・Complement to type 2SD1563
・Low collector saturation voltage
・Large current capability
APPLICATIONS
・Designed for use in low frequency
power amplifier applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-120
V
VCEO
Collector-emitter voltage
Open base
-120
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current (DC)
-1.5
A
ICM
Collector current -peak
-3.0
A
PD
Total power dissipation
10
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SB1086
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=-1mA ;IB=0
-120
V
V(BR)CBO
Collector-base breakdown voltage
IC=-50μA ;IE=0
-120
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-50μA ;IC=0
-5
V
VCEsat
Collector-emitter saturation voltage
IC=-1.0A ;IB=-0.1A
-2.0
V
VBEsat
Base-emitter saturation voltage
IC=-1.0A ;IB=-0.1A
-1.5
V
ICBO
Collector cut-off current
VCB=-100V; IE=0
-1.0
μA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-1.0
μA
hFE
DC current gain
IC=-0.1A ; VCE=-5V
fT
Transition frequency
IC=-0.1A ; VCE=-5V
50
MHz
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
30
pF
2
MIN
TYP.
56
MAX
UNIT
390
JMnic
Product Specification
2SB1086
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3