JMnic Product Specification 2SB1086 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD1563 ・Low collector saturation voltage ・Large current capability APPLICATIONS ・Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector-emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -1.5 A ICM Collector current -peak -3.0 A PD Total power dissipation 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SB1086 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ;IB=0 -120 V V(BR)CBO Collector-base breakdown voltage IC=-50μA ;IE=0 -120 V V(BR)EBO Emitter-base breakdown voltage IE=-50μA ;IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-1.0A ;IB=-0.1A -2.0 V VBEsat Base-emitter saturation voltage IC=-1.0A ;IB=-0.1A -1.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -1.0 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -1.0 μA hFE DC current gain IC=-0.1A ; VCE=-5V fT Transition frequency IC=-0.1A ; VCE=-5V 50 MHz COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 30 pF 2 MIN TYP. 56 MAX UNIT 390 JMnic Product Specification 2SB1086 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3