JMNIC 2SB1007

JMnic
Product Specification
2SB1007
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-126 package
・Complement to type 2SD1378
・High breakdown voltage
APPLICATIONS
・Low frequency power amplification
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-80
V
VCEO
Collector-emitter voltage
Open base
-80
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current (DC)
-0.7
A
PD
Total power dissipation
Ta=25℃
1.2
W
TC=25℃
10
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
JMnic
Product Specification
2SB1007
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-2mA ;IB=0
-80
V
V(BR)CBO
Collector-base breakdown voltage
IC=-50μA ;IE=0
-80
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-50μA ;IC=0
-5
V
Collector-emitter saturation voltage
IC=-0.5A ;IB=-50mA
ICBO
Collector cut-off current
IEBO
VCEsat
‹
CONDITIONS
MIN
TYP.
UNIT
-0.4
V
VCB=-50V; IE=0
-0.5
μA
Emitter cut-off current
VEB=-4V; IC=0
-0.5
μA
hFE
DC current gain
IC=-0.1A ; VCE=-3V
COB
Output capacitance
IE=0; VCB=-10V;f=1MHz
14
fT
Transition frequency
IE=50mA ; VCE=-10V
100
hFE Classifications
P
Q
R
82-180
120-270
180-390
2
-0.2
MAX
82
390
20
pF
MHz
JMnic
Product Specification
2SB1007
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3