JMnic Product Specification 2SB1007 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD1378 ・High breakdown voltage APPLICATIONS ・Low frequency power amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -0.7 A PD Total power dissipation Ta=25℃ 1.2 W TC=25℃ 10 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SB1007 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-2mA ;IB=0 -80 V V(BR)CBO Collector-base breakdown voltage IC=-50μA ;IE=0 -80 V V(BR)EBO Emitter-base breakdown voltage IE=-50μA ;IC=0 -5 V Collector-emitter saturation voltage IC=-0.5A ;IB=-50mA ICBO Collector cut-off current IEBO VCEsat CONDITIONS MIN TYP. UNIT -0.4 V VCB=-50V; IE=0 -0.5 μA Emitter cut-off current VEB=-4V; IC=0 -0.5 μA hFE DC current gain IC=-0.1A ; VCE=-3V COB Output capacitance IE=0; VCB=-10V;f=1MHz 14 fT Transition frequency IE=50mA ; VCE=-10V 100 hFE Classifications P Q R 82-180 120-270 180-390 2 -0.2 MAX 82 390 20 pF MHz JMnic Product Specification 2SB1007 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3