JMnic Product Specification 2SC1212 2SC1212A Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA743/743A APPLICATIONS ・For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SC1212 VCBO Collector-base voltage 50 Open base 2SC1212A VEBO Emitter-base voltage IC Collector current PD Total power dissipation V 80 2SC1212 Collector- emitter voltage UNIT 50 Open emitter 2SC1212A VCEO VALUE V 80 Open collector 4 V 1 A Ta=25℃ 0.75 TC=25℃ 8 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55～+150 ℃ JMnic Product Specification 2SC1212 2SC1212A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SC1212 V(BR)CEO Collector-emitter breakdown voltage MAX Collector-base breakdown voltage UNIT 50 V 80 2SC1212 50 IC=1mA ;IE=0 2SC1212A V(BR)EBO TYP. IC=10mA ;RBE=∞ 2SC1212A V(BR)CBO MIN V 80 Emitter-base breakdown voltage IE=1mA ;IC=0 Collector-emitter saturation voltage IC=1A ;IB=0.1A 1.5 V VBE Base-emitter voltage IC=50mA ; VCE=4V 1.0 V ICBO Collector cut-off current VCB=50V; IE=0 5 μA hFE-1 DC current gain IC=50mA ; VCE=4V 60 hFE-2 DC current gain IC=1A ; VCE=4V 20 Transition frequency IC=30mA ; VCE=4V VCEsat fT hFE-1 Classifications B C 60-120 100-200 2 4 V 200 160 MHz JMnic Product Specification 2SC1212 2SC1212A Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 JMnic Product Specification 2SC1212 2SC1212A Silicon NPN Power Transistors 4