Product Specification www.jmnic.com 2SC1173 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA473 ・Collector current :IC=3A ・Collector dissipation:PC=10W@TC=25℃ APPLICATIONS ・Low frequency power amplifier ・Power regulator PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 30 V VCEO Collector-emitter voltage Open base 30 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 3 A PC Collector power dissipation 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification www.jmnic.com 2SC1173 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO Collector-emitter breakdown voltage IC=10mA ;IB=0 30 V VCBO Collector-base breakdown voltage IC=0.5mA ;IE=0 30 V VEBO Emitter-base breakdown voltage IE=1mA ;IC=0 5 V VCEsat Collector-emitter saturation voltage IC=2A IB=0.2A 0.8 V VBE Base-emitter on voltage IC=0.5A ; VCE=2V 1.0 V ICBO Collector cut-off current VCB=20V;IE=0 1.0 μA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 μA hFE-1 DC current gain IC=0.5A ; VCE=2V 70 hFE-2 DC current gain IC=2.5A ; VCE=2V 25 COB Output capacitance IE=0; VCB=10V;f=1MHz 35 pF fT Transition frequency IC=0.5A ; VCE=2V 100 MHz hFE-1 classifications O Y 70-140 120-240 JMnic MIN TYP. MAX UNIT 240 Product Specification www.jmnic.com 2SC1173 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) JMnic