JMnic Product Specification 2SB1020 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High DC current gain ・Low saturation voltage ・Complement to type 2SD1415 APPLICATIONS ・High power switching applications ・Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector -emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -5 V -7 A -0.2 A 30 W IC Collector current IB Base current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SB1020 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 VCEsat-1 Collector-emitter saturation voltage IC=-3A ;IB=-6mA -0.95 -1.5 V VCEsat-2 Collector-emitter saturation voltage IC=-7A ;IB=-14mA -1.3 -2.0 V Base-emitter saturation voltage IC=-3A ;IB=-6mA -1.55 -2.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -100 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -4.0 mA hFE-1 DC current gain IC=-3A ; VCE=-3V 2000 hFE-2 DC current gain IC=-7A ; VCE=-3V 1000 VBEsat -100 UNIT V 15000 Switching times ton Turn-on time tstg Storage time tf IB1=-IB2=-6mA VCC=-45V ,RL=15Ω Fall time 2 0.8 μs 2.0 μs 2.5 μs JMnic Product Specification 2SB1020 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3