JMNIC 2SB869

JMnic
Product Specification
2SB869
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-220C package
・Complement to type 2SD961
・Low collector saturation voltage
・High collector current capability
APPLICATIONS
・For power switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-130
V
VCEO
Collector-emitter voltage
Open base
-80
V
VEBO
Emitter-base voltage
Open collector
-7
V
IC
Collector current (DC)
-5
A
ICM
Collector current-Peak
-10
A
PC
Collector dissipation
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-50~150
℃
TC=25℃
JMnic
Product Specification
2SB869
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=-4A; IB=-0.2A
-0.5
V
VBEsat
Base-emitter saturation voltage
IC=-4A; IB=-0.2A
-1.5
V
ICBO
Collector cut-off current
VCB=-100V; IE=0
-10
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-50
μA
hFE-1
DC current gain
IC=-0.1A ; VCE=-2V
45
hFE-2
DC current gain
IC=-2A ; VCE=-2V
60
Transition frequency
IC=-0.5A ; VCE=-10V
fT
CONDITIONS
MIN
TYP.
MAX
-80
UNIT
V
260
30
MHz
0.13
μs
0.5
μs
0.13
μs
Switching times
ton
Turn-on time
tstg
Storage time
tf
‹
IC=-2A ; IB1=-IB2=-0.2A
Fall time
hFE-2 Classifications
R
Q
P
60-120
90-180
130-260
2
JMnic
Product Specification
2SB869
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3