Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD633 2SD635 · DESCRIPTION ·With TO-220C package ·Complement to type 2SB673/675 ·DARLINGTON ·High DC current gain ·Low saturation voltage APPLICATIONS ·High power switching ·Hammer drive,pulse motor drive PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SD633 VCBO Collector-base voltage 100 Open base 2SD635 VEBO Emitter-base voltage V 60 2SD633 Collector-emitter voltage UNIT 100 Open emitter 2SD635 VCEO VALUE V 60 Open collector 5 V 7 A 0.7 A 40 W IC Collector current IB Base current PC Collector dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -50~150 ℃ B TC=25℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD633 2SD635 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SD633 V(BR)CEO Collector-emitter breakdown voltage MIN TYP. MAX UNIT 100 IC=50mA; IB=0 V 60 2SD635 VCEsat-1 Collector-emitter saturation voltage IC=3A; IB=6mA 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=7A; IB=14mA 2.0 V Base-emitter saturation voltage IC=3A; IB=6mA 2.5 V 100 μA 3.0 mA VBEsat 2SD633 ICBO Collector cut-off current 2SD635 VCB=100V; IE=0 VCB=60V; IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=3A ; VCE=3V 2000 hFE-2 DC current gain IC=7A ; VCE=3V 1000 15000 Switching times ton Turn-on time ts Storage time tf Fall time IB1=-IB2=6mA VCC=45V;RL=15Ω 2 0.8 μs 3.0 μs 2.5 μs Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD633 2SD635 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3