JMNIC 2SB1156

JMnic
Product Specification
2SB1156
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-3PFa package
・Complement to type 2SD1707
・Low collector saturation voltage
・Large collector current
APPLICATIONS
・For power switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-130
V
VCEO
Collector-emitter voltage
Open base
-80
V
VEBO
Emitter-base voltage
Open collector
-7
V
IC
Collector current
-20
A
ICM
Collector current-peak
-30
A
PC
Collector power dissipation
Ta=25℃
3
W
TC=25℃
100
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
JMnic
Product Specification
2SB1156
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA ;IB=0
VCEsat-1
Collector-emitter saturation voltage
IC=-8A ;IB=-0.4A
-0.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=-20A ;IB=-2A
-1.5
V
VBEsat-1
Base-emitter saturation voltage
IC=-8A ;IB=-0.4A
-1.5
V
VBEsat-2
Base-emitter saturation voltage
IC=-20A ;IB=-2A
-2.5
V
ICBO
Collector cut-off current
VCB=-100V; IE=0
-10
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-50
μA
hFE -1
DC current gain
IC=-0.1A ; VCE=-2V
45
hFE -2
DC current gain
IC=-3A ; VCE=-2V
60
hFE -3
DC current gain
IC=-10A ; VCE=-2V
30
Transition frequency
IC=-0.5A ; VCE=-10V
fT
CONDITIONS
MIN
TYP.
MAX
-80
UNIT
V
260
25
MHz
0.5
μs
1.2
μs
0.2
μs
Switching times
ton
Turn-on time
tstg
Storage time
tf
‹
VCC=-50V;
IC=-3A;IB1=-0.8A ,IB2=0.8A
Fall time
hFE-2 classifications
R
Q
P
60-120
90-180
130-260
2
JMnic
Product Specification
2SB1156
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3