JMnic Product Specification 2SB1156 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1707 ・Low collector saturation voltage ・Large collector current APPLICATIONS ・For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -130 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -20 A ICM Collector current-peak -30 A PC Collector power dissipation Ta=25℃ 3 W TC=25℃ 100 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SB1156 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 VCEsat-1 Collector-emitter saturation voltage IC=-8A ;IB=-0.4A -0.5 V VCEsat-2 Collector-emitter saturation voltage IC=-20A ;IB=-2A -1.5 V VBEsat-1 Base-emitter saturation voltage IC=-8A ;IB=-0.4A -1.5 V VBEsat-2 Base-emitter saturation voltage IC=-20A ;IB=-2A -2.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -50 μA hFE -1 DC current gain IC=-0.1A ; VCE=-2V 45 hFE -2 DC current gain IC=-3A ; VCE=-2V 60 hFE -3 DC current gain IC=-10A ; VCE=-2V 30 Transition frequency IC=-0.5A ; VCE=-10V fT CONDITIONS MIN TYP. MAX -80 UNIT V 260 25 MHz 0.5 μs 1.2 μs 0.2 μs Switching times ton Turn-on time tstg Storage time tf VCC=-50V; IC=-3A;IB1=-0.8A ,IB2=0.8A Fall time hFE-2 classifications R Q P 60-120 90-180 130-260 2 JMnic Product Specification 2SB1156 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3