JMnic Product Specification 2SB1037 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High allowable collector dissipation. ・Complement to type 2SD1459 APPLICATIONS ・For color TV vertical output, sound output applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -5 V -1.5 A -3 A IC Collector current ICM Collector current-peak PC Collector power dissipation 2.0 W TC=25℃ 30 Tj Junction temperature 175 ℃ Tstg Storage temperature -55~175 ℃ JMnic Product Specification 2SB1037 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ; IB=0 VCEsat Collector-emitter saturation voltage IC=-0.5A, IB=-50mA -1.5 V VBEsat Base-emitter saturation voltage IC=-0.5A, IB=-50mA -1.2 V ICBO Collector cut-offcurrent VCB=-120V;IE=0 -10 μA IEBO Emitter cut-offcurrent VEB=-5V;IC=0 -10 μA hFE DC current gain IC=-0.3A ; VCE=-5V Transition frequency IC=-0.1A ; VCE=-5V fT CONDITIONS hFE classifications Q R 70-140 100-200 2 MIN TYP MAX -150 UNIT V 70 200 15 MHz JMnic Product Specification 2SB1037 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 JMnic Product Specification 2SB1037 Silicon NPN Power Transistors 4