JMnic Product Specification 2SB861 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD1138 APPLICATIONS ・Low frequency power amplifier color TV vertical deflection output PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -200 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -2 A ICP Collector current-Peak -5 A PC Collector power dissipation Ta=25℃ 1.8 TC=25℃ 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -45~150 ℃ JMnic Product Specification 2SB861 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; RBE=∞ V(BR)EBO Emitter-base breakdown votage IE=-5mA; IC=0 Collector-emitter saturation voltage IC=-0.5 A;IB=-50m A -3.0 V VBE Base-emitter voltage IC=-50mA ; VCE=-4V -1.0 V ICBO Collector cut-off current VCB=-120V; IE=0 -1 μA hFE-1 DC current gain IC=-50mA ; VCE=-4V 60 hFE-2 DC current gain IC=-0.5A ; VCE=-10V 60 COB Output capacitance IE=0 ;VCB=-100V,f=1MHz VCEsat CONDITIONS hFE-1 classifications B C 60-120 100-200 2 MIN TYP. MAX UNIT -150 V -6 V 200 30 pF JMnic Product Specification 2SB861 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 JMnic Product Specification 2SB861 Silicon PNP Power Transistors 4