JMnic Product Specification 2SB940,2SB940A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1264/1264A ・High collector to emitter voltage VCEO ・Large collector power dissipation PC APPLICATIONS ・For power amplification ・For TV vertical deflection output PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SB940 VCBO Collector-base voltage -150 Open base 2SB940A VEBO Emitter-base voltage V -200 2SB940 Collector-emitter voltage UNIT -200 Open emitter 2SB940A VCEO VALUE V -180 Open collector -6 V IC Collector current -2 A ICM Collector current-peak -3 A PC Collector power dissipation Ta=25℃ 2 TC=25℃ 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SB940,2SB940A Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SB940 V(BR)CEO Collector-emitter breakdown voltage MIN TYP. MAX UNIT -150 IC=-5mA ,IB=0 V -180 2SB940A V(BR)CBO Collector-base breakdown voltage IC=-50μA ,IE=0 -200 V V(BR)EBO Emitter-base breakdown voltage IC=-500μA ,IC=0 -6 V Collector-emitter saturation voltage IC=-0.5A, IB=-50mA -1.0 V VBE Base-emitter voltage IC=-0.4A ; VCE=-10V -1.0 V IEBO Emitter cut-off current VEB=-4V; IC=0 -50 μA ICBO Collector cut-off current VCB=-200V; IE=0 -50 μA hFE-1 DC current gain IC=-0.15A ; VCE=-10V 60 hFE-2 DC current gain IC=-0.4A ; VCE=-10V 50 Transition frequency IC=-0.5A; VCE=-10V,f=10MHz VCEsat fT hFE-1 Classifications Q P 60-140 100-240 2 240 30 MHz JMnic Product Specification 2SB940,2SB940A Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 JMnic Product Specification 2SB940,2SB940A Silicon PNP Power Transistors 4