JMnic Product Specification 2SB631 2SB631K Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD600/K ・High breakdown voltage VCEO:-100/-120V ・High current: -1A ・Low saturation voltage,excellent hFE linearity APPLICATIONS ・For low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SB631 VCBO Collector-base voltage -100 Open base 2SB631K VEBO Emitter-base voltage IC V -120 2SB631 Collector-emitter voltage UNIT -100 Open emitter 2SB631K VCEO VALUE V -120 Open collector -5 V Collector current (DC) -1 A ICM Collector current-Peak -2 A PD Total power dissipation Ta=25℃ 1 TC=25℃ 8 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SB631 2SB631K Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO PARAMETER CONDITIONS 2SB631 Collector-emitter breakdown voltage MIN TYP. MAX -100 IC=-1mA; RBE=∞ 2SB631K V -120 2SB631 Collector-base breakdown voltage UNIT -100 IC=-10μA ;IE=0 V -120 2SB631K Emitter-base breakdown voltage IE=-10μA ;IC=0 VCEsat Collector-emitter saturation voltage IC=-0.5A ;IB=-50mA -0.4 V VBEsat Base-emitter saturation voltage IC=-0.5A ;IB=-50mA -1.2 V ICBO Collector cut-off current VCB=-50V; IE=0 -1 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -1 μA hFE-1 DC current gain IC=-50mA ; VCE=-5V 60 hFE-2 DC current gain IC=-0.5A ; VCE=-5V 20 Transition frequency IC=-50mA ; VCE=-10V 110 MHz Collector output capacitance f=1MHz ; VCB=-10V 30 pF 0.08 μs 0.10 μs 0.60 μs V(BR)EBO fT COB -5 V 320 Switching times tf Fall time toff Turn-off time tstg Storage time IC=-500mA ; VCE=-12V IB1=-IB2=-50mA hFE-1 Classifications D E F 60-120 100-200 160-320 2 JMnic Product Specification 2SB631 2SB631K Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 JMnic Product Specification 2SB631 2SB631K Silicon PNP Power Transistors 4