JMnic Product Specification 2SB1186 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector saturation votlage ・Complement to type 2SD1763 ・High breakdown voltage APPLICATIONS ・For use in low frequency power amplifer applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector -emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -1.5 A ICM Collector current-peak -3.0 A PC Collector power dissipation Ta=25℃ 2.0 TC=25℃ 20 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SB1186 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; IB=0 -120 V V(BR)CBO Collector-base breakdown voltage IC=-50μA; IE=0 -120 V V(BR)EBO Emitter-base breakdown voltage IE=-50μA; IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-1A ;IB=-0.1A -2.0 V VBEsat Base-emitter saturation voltage IC=-1A ;IB=-0.1A -1.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -1.0 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -1.0 μA hFE DC current gain IC=-0.1A ; VCE=-5V Transition frequency IC=-0.1A; VCE=-5V 50 MHz Collector output capacitance IE=0;f=1MHz ; VCB=-10V 30 pF fT COB CONDITIONS hFE Classifications E F 100-200 160-320 2 MIN TYP. 100 MAX UNIT 320 JMnic Product Specification 2SB1186 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3