JMnic Product Specification 2SB1185 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector saturation votlage ・Complement to type 2SD1762 APPLICATIONS ・For use in low frequency power amplifer applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector -emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -5 V -3 A -4.5 A IC Collector current ICM Collector current-peak PC Collector power dissipation Ta=25℃ 2.0 TC=25℃ 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SB1185 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; IB=0 -50 V V(BR)CBO Collector-base breakdown voltage IC=-50μA; IE=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-50μA; IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-2A ;IB=-0.2A -1.0 V VBEsat Base-emitter saturation voltage IC=-2A ;IB=-0.2A -1.5 V ICBO Collector cut-off current VCB=-40V; IE=0 -1.0 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -1.0 μA hFE DC current gain IC=-500mA ; VCE=-3V Transition frequency IC=-0.5A; VCE=-5V 70 MHz Collector output capacitance IE=0;f=1MHz ; VCB=-10V 50 pF fT COB CONDITIONS hFE Classifications D E F 60-120 100-200 160-320 2 MIN TYP. 60 MAX UNIT 320 JMnic Product Specification 2SB1185 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3