Product Specification www.jmnic.com 2SC1507 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High collector-emitter voltage : VCEO=300V ・High frequency:fT=40MHz(Min) APPLICATIONS ・For color TV chroma output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 7 V 0.2 A 15 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification www.jmnic.com 2SC1507 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCBO(BR) Collector-base breakdown voltage IC=10μA ;IE=0 300 V VCEO(BR) Collector-emitter breakdown voltage IC=10mA ;IB=0 300 V VEBO(BR) Emitter-base breakdown voltage IE=10μA ;IC=0 7 V Collector-emitter saturation voltage IC=50mA ;IB=5mA 2.0 V ICBO Collector cut-off current VCB=200V;IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 100 μA hFE DC current gain IC=10mA ; VCE=10V COB Output capacitance IE=0; VCB=50V;f=1MHz fT Transition frequency IC=10mA ; VCE=30V VCEsat hFE-1 classifications R O Y 40-80 70-140 120-240 JMnic 40 40 240 4 pF 80 MHz Product Specification www.jmnic.com 2SC1507 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) JMnic