JMNIC 2SC1507

Product Specification
www.jmnic.com
2SC1507
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220 package
・High collector-emitter voltage
: VCEO=300V
・High frequency:fT=40MHz(Min)
APPLICATIONS
・For color TV chroma output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
300
V
VCEO
Collector-emitter voltage
Open base
300
V
VEBO
Emitter-base voltage
Open collector
7
V
0.2
A
15
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
www.jmnic.com
2SC1507
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCBO(BR)
Collector-base breakdown voltage
IC=10μA ;IE=0
300
V
VCEO(BR)
Collector-emitter breakdown voltage
IC=10mA ;IB=0
300
V
VEBO(BR)
Emitter-base breakdown voltage
IE=10μA ;IC=0
7
V
Collector-emitter saturation voltage
IC=50mA ;IB=5mA
2.0
V
ICBO
Collector cut-off current
VCB=200V;IE=0
100
μA
IEBO
Emitter cut-off current
VEB=7V; IC=0
100
μA
hFE
DC current gain
IC=10mA ; VCE=10V
COB
Output capacitance
IE=0; VCB=50V;f=1MHz
fT
Transition frequency
IC=10mA ; VCE=30V
VCEsat
hFE-1 classifications
R
O
Y
40-80
70-140
120-240
JMnic
40
40
240
4
pF
80
MHz
Product Specification
www.jmnic.com
2SC1507
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
JMnic