Inchange Semiconductor Product Specification 2SC3685 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High breakdown voltage ・High reliability ・Fast speed APPLICATIONS ・Ultrahigh-definition CRT display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol 体 导 半 固电 Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO EM S E NG PARAMETER A H C IN R O T UC D N O IC CONDITIONS VALUE UNIT Collector-base voltage Open emitter 1500 V Collector-emitter voltage Open base 800 V Emitter-base voltage Open collector 6 V IC Collector current 6 A ICP Collector current-pulse 16 A PC Collector power dissipation 125 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC3685 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 VCEsat Collector-emitter saturation voltage IC=4A ;IB=1A 5 V VBEsat Base-emitter saturation voltage IC=4A ;IB=1A 1.5 V ICES Collector cut-off current VCE=1500V; RBE=0 1 mA IEBO Emitter cut-off current VEB=4V; IC=0 1 mA hFE DC current gain IC=1A ; VCE=5V Switching times tstg tf 固电 体 导 半 Storage time Fall time CONDITIONS EM S E NG 2 TYP. MAX 800 UNIT V 8 R O T UC D N O IC IC=4A;IB1=0.8A; IB2=-1.6A V CC=200V A H C IN MIN 0.1 3.0 μs 0.2 μs Inchange Semiconductor Product Specification 2SC3685 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 Inchange Semiconductor Product Specification 2SC3685 Silicon NPN Power Transistors 体 导 半 固电 EM S E NG A H C IN 4 D N O IC R O T UC