ISC 2SC3685

Inchange Semiconductor
Product Specification
2SC3685
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PN package
・High breakdown voltage
・High reliability
・Fast speed
APPLICATIONS
・Ultrahigh-definition CRT display horizontal
deflection output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
体
导
半
固电
Absolute maximum ratings(Ta=℃)
SYMBOL
VCBO
VCEO
VEBO
EM
S
E
NG
PARAMETER
A
H
C
IN
R
O
T
UC
D
N
O
IC
CONDITIONS
VALUE
UNIT
Collector-base voltage
Open emitter
1500
V
Collector-emitter voltage
Open base
800
V
Emitter-base voltage
Open collector
6
V
IC
Collector current
6
A
ICP
Collector current-pulse
16
A
PC
Collector power dissipation
125
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC3685
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=4A ;IB=1A
5
V
VBEsat
Base-emitter saturation voltage
IC=4A ;IB=1A
1.5
V
ICES
Collector cut-off current
VCE=1500V; RBE=0
1
mA
IEBO
Emitter cut-off current
VEB=4V; IC=0
1
mA
hFE
DC current gain
IC=1A ; VCE=5V
Switching times
tstg
tf
固电
体
导
半
Storage time
Fall time
CONDITIONS
EM
S
E
NG
2
TYP.
MAX
800
UNIT
V
8
R
O
T
UC
D
N
O
IC
IC=4A;IB1=0.8A; IB2=-1.6A
V CC=200V
A
H
C
IN
MIN
0.1
3.0
μs
0.2
μs
Inchange Semiconductor
Product Specification
2SC3685
Silicon NPN Power Transistors
PACKAGE OUTLINE
体
导
半
固电
EM
S
E
NG
A
H
C
IN
R
O
T
UC
D
N
O
IC
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
Inchange Semiconductor
Product Specification
2SC3685
Silicon NPN Power Transistors
体
导
半
固电
EM
S
E
NG
A
H
C
IN
4
D
N
O
IC
R
O
T
UC