Product Specification www.jmnic.com 2SC3979 Silicon Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・High breakdown voltage ・High speed switching ・Wide area of safe operation (SOA) ・Full-pack package which can be installed to the heak sink with one screw PINNING PIN DESCRIPTION 1 Base 2 Collector 3 emitter Fig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25℃ SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 900 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 3 A ICM Collector current-Peak 5 A IB Base current 1 A PC Collector power dissipation TC=25℃ 40 W PC Collector power dissipation Ta=25℃ 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification www.jmnic.com 2SC3979 Silicon Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO Collector-emitter voltage IC=10mA , IB=0 VCEsat Collector-emitter saturation voltage IC=0.8A IB=0.16A 1.5 V VBEsat Emitter-base saturation voltage IC=0.8A IB=0.16A 1.5 V ICBO Collector cut-off current VCB=900V IE=0 50 μA IEBO Emitter cut-off current VEB=7V; IC=0 50 μA hFE-1 DC current gain IC=0.1A ; VCE=5V 8 hFE-2 DC current gain IC=0.8A ; VCE=5V 6 Transition frequency IC=0.15A ; VCE=5V fT 800 UNIT V 10 MHz Switching times ton Turn-on time ts Storage time tf Fall time IC=0.8A ;IB1=0.8A IB2=-0.32A VCC=250V JMnic 0.7 μs 2.5 μs 0.3 μs Product Specification www.jmnic.com 2SC3979 Silicon Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) JMnic