JMnic Product Specification 2SC3466 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High breakdown voltage and high reliability. ・Fast switching speed ・Wide area of safe operation APPLICATIONS ・Switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1200 V VCEO Collector-emitter voltage Open base 650 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 8 A ICM Collector current-peak 20 A IB Base current 3 A PC Collector power dissipation 120 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SC3466 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=∞ 650 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 1200 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A 3.0 V VBEsat Base-emitter saturation voltage IC=4A ;IB=0.8A 1.5 V ICBO Collector cut-off current VCB=650V; IE=0 100 μA IEBO Emitter cut-off current VEB=5V; IC=0 100 μA hFE-1 DC current gain IC=1A ; VCE=5V 10 hFE-2 DC current gain IC=4A ; VCE=5V 6 Cob Output capacitance IE=0 ; VCB=10V;f=1MHz fT Transition frequency IC=1A ; VCE=10V 40 120 pF 5 MHz Switching times ton Turn-on time tstg Storage time tf IC=4A;RL=50Ω IB1=0.8A; IB2=-1.6A VCC=200V Fall time hFE-1 Classifications K L M 10-20 15-30 20-40 2 1.0 μs 4.0 μs 0.7 μs JMnic Product Specification 2SC3466 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 JMnic Product Specification 2SC3466 Silicon NPN Power Transistors 4